Vishay E Type N-Channel Power MOSFET, 3 A, 850 V Enhancement, 3-Pin TO-220 SiHA5N80AE-GE3
- N° de stock RS:
- 228-2839
- Référence fabricant:
- SiHA5N80AE-GE3
- Fabricant:
- Vishay
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 tube de 50 unités)*
41,70 €
(TVA exclue)
50,45 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- 850 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
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Unité | Prix par unité | le tube* |
|---|---|---|
| 50 - 50 | 0,834 € | 41,70 € |
| 100 - 200 | 0,792 € | 39,60 € |
| 250 + | 0,751 € | 37,55 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 228-2839
- Référence fabricant:
- SiHA5N80AE-GE3
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 3A | |
| Maximum Drain Source Voltage Vds | 850V | |
| Series | E | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.35Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 11nC | |
| Maximum Power Dissipation Pd | 29W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 3A | ||
Maximum Drain Source Voltage Vds 850V | ||
Series E | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.35Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 11nC | ||
Maximum Power Dissipation Pd 29W | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 30V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Vishay Series E Power MOSFET, 850V Drain Source Voltage, 3A Continuous Drain Current - SiHA5N80AE-GE3
This power MOSFET is a high‑voltage N‑channel transistor designed for switching and amplification tasks in demanding electronic systems. It operates across a wide thermal range and is supplied in a through‑hole TO‑220 package for straightforward board mounting, making it suitable for industrial assemblies where robust voltage handling and accessible mounting are required.
Features and Benefits:
• 850V drain rating enables high‑voltage switching applications
• 3A continuous current supports moderate load currents
• 29W power dissipation allows sustained thermal loading
• 1.35Ω Rds(on) provides predictable conduction losses
• 11nC typical gate charge ensures manageable gate‑drive requirements
• 30V maximum gate voltage permits common gate‑drive voltages
• 3A continuous current supports moderate load currents
• 29W power dissipation allows sustained thermal loading
• 1.35Ω Rds(on) provides predictable conduction losses
• 11nC typical gate charge ensures manageable gate‑drive requirements
• 30V maximum gate voltage permits common gate‑drive voltages
Applications
• Suitable for high‑voltage power conversion stages
• Ideal for industrial motor‑drive front ends
• Used with snubbered switching supplies and inverters
• Can be used for high‑voltage laboratory test equipment
• Suitable for discrete switch implementations in power control
• Ideal for industrial motor‑drive front ends
• Used with snubbered switching supplies and inverters
• Can be used for high‑voltage laboratory test equipment
• Suitable for discrete switch implementations in power control
What temperature extremes can it withstand during operation?
It is specified to function from -55°C up to 150°C, covering a wide industrial operating envelope.
How is it mounted and integrated into legacy designs?
The component comes in a TO‑220 through‑hole format, facilitating soldered or screw‑down heatsink attachments and easy replacement on conventional boards.
What gate‑drive considerations should be observed?
Ensure gate‑drive amplitude does not exceed 30V and provide sufficient drive strength for the 11nC typical gate charge to achieve the desired switching speeds.
Is it suitable for automotive‑certified projects?
It is not supplied with automotive standard approval and should not be assumed to be compliant with vehicle‑specific qualification requirements.
Liens connexes
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