Vishay E Type N-Channel Power MOSFET, 9 A, 850 V Enhancement, 3-Pin TO-220 SIHA24N80AE-GE3

Sous-total (1 tube de 50 unités)*

84,75 €

(TVA exclue)

102,55 €

(TVA incluse)

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Prix par unité
le tube*
50 +1,695 €84,75 €

*Prix donné à titre indicatif

N° de stock RS:
228-2836
Référence fabricant:
SIHA24N80AE-GE3
Fabricant:
Vishay
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Marque

Vishay

Product Type

Power MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

9A

Maximum Drain Source Voltage Vds

850V

Package Type

TO-220

Series

E

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

184mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Maximum Gate Source Voltage Vgs

30V

Typical Gate Charge Qg @ Vgs

59nC

Maximum Power Dissipation Pd

35W

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Automotive Standard

No

Vishay Series E Power MOSFET, 850V Drain-Source Voltage, 9A Continuous Drain Current - SIHA24N80AE-GE3


This power MOSFET is a high-voltage N-channel enhancement device designed for switching and power-control roles in through-hole assemblies. It is supplied in a TO-220 package suitable for traditional mounting methods and is engineered to operate across a wide thermal span for demanding electronic systems.

Features and Benefits:


• 850V drain capability for high-voltage switching applications
• 9A continuous drain current for sustained power handling
• 184mΩ Rds(on) reduces conduction losses at operating currents
• 35W maximum dissipation allows significant power throughput
• 59nC typical gate charge enables predictable switching dynamics
• 30V gate rating supports common gate-drive voltages

Applications


• Suitable for high-voltage switch-mode power supplies
• Used for industrial motor-drive switching stages
• Ideal for mid-power inverter and converter designs
• Can be used for DC-DC conversion in telecom equipment
• Suitable for laboratory and prototyping through-hole builds

What temperature extremes can it withstand in operation?


It functions from -55°C up to 150°C, allowing use in harsh thermal environments.

How does the forward voltage affect switching circuits?


The 1.2V forward voltage influences conduction drop during body-diode conduction and should be considered when estimating reverse-recovery losses.

Is the device suitable for automotive electronic systems?


It is not specified to automotive standards, so additional validation is recommended for vehicle applications.

What mounting and connection considerations apply for thermal management?


The TO-220 through-hole format permits direct heatsinking to the tab for improved thermal dissipation up to the stated power limit.

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