Vishay E Type N-Channel Power MOSFET, 9 A, 850 V Enhancement, 3-Pin TO-220 SIHA24N80AE-GE3
- N° de stock RS:
- 228-2837
- Référence fabricant:
- SIHA24N80AE-GE3
- Fabricant:
- Vishay
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 paquet de 2 unités)*
5,09 €
(TVA exclue)
6,158 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 2 - 18 | 2,545 € | 5,09 € |
| 20 - 48 | 2,285 € | 4,57 € |
| 50 - 98 | 2,16 € | 4,32 € |
| 100 - 198 | 2,04 € | 4,08 € |
| 200 + | 1,885 € | 3,77 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 228-2837
- Référence fabricant:
- SIHA24N80AE-GE3
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 9A | |
| Maximum Drain Source Voltage Vds | 850V | |
| Series | E | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 184mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 35W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 59nC | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Product Type Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 9A | ||
Maximum Drain Source Voltage Vds 850V | ||
Series E | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 184mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 35W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 59nC | ||
Maximum Gate Source Voltage Vgs 30V | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Vishay Series E Power MOSFET, 850V Maximum Drain Source Voltage, 9A Maximum Continuous Drain Current - SIHA24N80AE-GE3
This power MOSFET is a high-voltage N-type enhancement device designed for switching and power-conversion roles in industrial electronic systems. It is supplied in a TO-220 through-hole package for straightforward mounting and thermal interfacing, and is suitable for equipment where robust drain-source voltage handling and moderate current capability are required.
Features and Benefits:
• 850V maximum drain-source voltage for high-voltage switching applications
• 9 A continuous drain current enabling moderate load handling
• 184 mΩ Rds(on) yielding predictable conduction losses
• 59 nC typical gate charge allowing controlled switching energy
• 35W power dissipation for significant thermal headroom
• 150 °C maximum operating temperature supporting elevated-temperature environments
• 9 A continuous drain current enabling moderate load handling
• 184 mΩ Rds(on) yielding predictable conduction losses
• 59 nC typical gate charge allowing controlled switching energy
• 35W power dissipation for significant thermal headroom
• 150 °C maximum operating temperature supporting elevated-temperature environments
Applications
• Suitable for power supplies requiring high-voltage switching components
• Ideal for industrial motor-drive gate-stage circuits
• Used for high-voltage snubber and clamp circuits in automation systems
• Can be used for line-side switching in lighting and control equipment
• Suitable for prototypes and production boards needing through-hole mounting
• Ideal for industrial motor-drive gate-stage circuits
• Used for high-voltage snubber and clamp circuits in automation systems
• Can be used for line-side switching in lighting and control equipment
• Suitable for prototypes and production boards needing through-hole mounting
What gate voltage limits should designers respect for safe operation?
The gate-source voltage must not exceed 30V to avoid overstressing the gate dielectric.
How does thermal management affect continuous current capability?
The 35W dissipation rating assumes effective heat-sinking
without adequate thermal paths, junction temperature will rise and continuous current capability will be reduced.
Is this device suitable for automotive applications requiring specific automotive standards?
It is not designated to automotive-specific standards and should be evaluated against vehicle-level qualification requirements before use.
What are the expected switching trade-offs given the gate charge and Rds(on)?
The moderate gate charge combined with 184 mΩ on-resistance indicates a balance between switching losses and conduction losses
gate-drive strength and switching frequency will determine overall efficiency.
Liens connexes
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