Vishay E Type N-Channel Power MOSFET, 9 A, 850 V Enhancement, 3-Pin TO-220 SIHA24N80AE-GE3
- N° de stock RS:
- 228-2837
- Référence fabricant:
- SIHA24N80AE-GE3
- Fabricant:
- Vishay
Sous-total (1 paquet de 2 unités)*
5,09 €
(TVA exclue)
6,158 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
- 668 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
Unité | Prix par unité | le paquet* |
|---|---|---|
| 2 - 18 | 2,545 € | 5,09 € |
| 20 - 48 | 2,285 € | 4,57 € |
| 50 - 98 | 2,16 € | 4,32 € |
| 100 - 198 | 2,04 € | 4,08 € |
| 200 + | 1,885 € | 3,77 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 228-2837
- Référence fabricant:
- SIHA24N80AE-GE3
- Fabricant:
- Vishay
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 9A | |
| Maximum Drain Source Voltage Vds | 850V | |
| Package Type | TO-220 | |
| Series | E | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 184mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Maximum Power Dissipation Pd | 35W | |
| Typical Gate Charge Qg @ Vgs | 59nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 9A | ||
Maximum Drain Source Voltage Vds 850V | ||
Package Type TO-220 | ||
Series E | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 184mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 30V | ||
Maximum Power Dissipation Pd 35W | ||
Typical Gate Charge Qg @ Vgs 59nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Vishay Series E Power MOSFET, 850V Maximum Drain Source Voltage, 9A Maximum Continuous Drain Current - SIHA24N80AE-GE3
Features and Benefits:
• 9 A continuous drain current enabling moderate load handling
• 184 mΩ Rds(on) yielding predictable conduction losses
• 59 nC typical gate charge allowing controlled switching energy
• 35W power dissipation for significant thermal headroom
• 150 °C maximum operating temperature supporting elevated-temperature environments
Applications
• Ideal for industrial motor-drive gate-stage circuits
• Used for high-voltage snubber and clamp circuits in automation systems
• Can be used for line-side switching in lighting and control equipment
• Suitable for prototypes and production boards needing through-hole mounting
What gate voltage limits should designers respect for safe operation?
How does thermal management affect continuous current capability?
Is this device suitable for automotive applications requiring specific automotive standards?
What are the expected switching trade-offs given the gate charge and Rds(on)?
Liens connexes
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- Vishay E Type N-Channel MOSFET 850 V Enhancement, 3-Pin TO-220
- Vishay E Type N-Channel MOSFET 850 V Enhancement, 3-Pin TO-220
