Vishay E Type N-Channel Power MOSFET, 9 A, 850 V Enhancement, 3-Pin TO-220 SIHA24N80AE-GE3
- N° de stock RS:
- 228-2837
- Référence fabricant:
- SIHA24N80AE-GE3
- Fabricant:
- Vishay
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 paquet de 2 unités)*
5,09 €
(TVA exclue)
6,158 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- 668 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le paquet* |
|---|---|---|
| 2 - 18 | 2,545 € | 5,09 € |
| 20 - 48 | 2,285 € | 4,57 € |
| 50 - 98 | 2,16 € | 4,32 € |
| 100 - 198 | 2,04 € | 4,08 € |
| 200 + | 1,885 € | 3,77 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 228-2837
- Référence fabricant:
- SIHA24N80AE-GE3
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 9A | |
| Maximum Drain Source Voltage Vds | 850V | |
| Package Type | TO-220 | |
| Series | E | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 184mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Typical Gate Charge Qg @ Vgs | 59nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 35W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Product Type Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 9A | ||
Maximum Drain Source Voltage Vds 850V | ||
Package Type TO-220 | ||
Series E | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 184mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 30V | ||
Typical Gate Charge Qg @ Vgs 59nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 35W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Vishay Series E Power MOSFET, 850V Drain-Source Voltage, 9A Continuous Drain Current - SIHA24N80AE-GE3
This power MOSFET is a high-voltage N-channel enhancement device designed for switching and power-control roles in through-hole assemblies. It is supplied in a TO-220 package suitable for traditional mounting methods and is engineered to operate across a wide thermal span for demanding electronic systems.
Features and Benefits:
• 850V drain capability for high-voltage switching applications
• 9A continuous drain current for sustained power handling
• 184mΩ Rds(on) reduces conduction losses at operating currents
• 35W maximum dissipation allows significant power throughput
• 59nC typical gate charge enables predictable switching dynamics
• 30V gate rating supports common gate-drive voltages
• 9A continuous drain current for sustained power handling
• 184mΩ Rds(on) reduces conduction losses at operating currents
• 35W maximum dissipation allows significant power throughput
• 59nC typical gate charge enables predictable switching dynamics
• 30V gate rating supports common gate-drive voltages
Applications
• Suitable for high-voltage switch-mode power supplies
• Used for industrial motor-drive switching stages
• Ideal for mid-power inverter and converter designs
• Can be used for DC-DC conversion in telecom equipment
• Suitable for laboratory and prototyping through-hole builds
• Used for industrial motor-drive switching stages
• Ideal for mid-power inverter and converter designs
• Can be used for DC-DC conversion in telecom equipment
• Suitable for laboratory and prototyping through-hole builds
What temperature extremes can it withstand in operation?
It functions from -55°C up to 150°C, allowing use in harsh thermal environments.
How does the forward voltage affect switching circuits?
The 1.2V forward voltage influences conduction drop during body-diode conduction and should be considered when estimating reverse-recovery losses.
Is the device suitable for automotive electronic systems?
It is not specified to automotive standards, so additional validation is recommended for vehicle applications.
What mounting and connection considerations apply for thermal management?
The TO-220 through-hole format permits direct heatsinking to the tab for improved thermal dissipation up to the stated power limit.
Liens connexes
- Vishay E Type N-Channel MOSFET 850 V Enhancement, 3-Pin TO-220
- Vishay E Type N-Channel MOSFET 850 V Enhancement, 3-Pin TO-220 SiHP6N80AE-GE3
- Vishay E Type N-Channel MOSFET 850 V Enhancement, 3-Pin TO-220 SiHP17N80AEF-GE3
- Vishay E Type N-Channel MOSFET 850 V Enhancement, 3-Pin TO-220 SiHA5N80AE-GE3
- Vishay E Type N-Channel MOSFET 850 V Enhancement, 3-Pin TO-220 SIHP21N80AEF-GE3
- Vishay E Type N-Channel MOSFET 850 V Enhancement, 3-Pin TO-220
- Vishay E Type N-Channel MOSFET 850 V Enhancement, 3-Pin TO-220
- Vishay E Type N-Channel MOSFET 850 V Enhancement, 3-Pin TO-220