Infineon HEXFET Type N-Channel MOSFET, 345 A, 60 V, 8-Pin DirectFET

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N° de stock RS:
223-8454
Référence fabricant:
AUIRF7749L2TR
Fabricant:
Infineon
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Marque

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

345A

Maximum Drain Source Voltage Vds

60V

Series

HEXFET

Package Type

DirectFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

1.5mΩ

Maximum Power Dissipation Pd

341W

Maximum Gate Source Voltage Vgs

60 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

183nC

Forward Voltage Vf

1.3V

Maximum Operating Temperature

175°C

Standards/Approvals

No

Automotive Standard

AEC-Q101

The Infineon single N-channel HEXFET power MOSFET is designed for applications where efficiency and power density are of value. The advanced DirectFET packaging platform coupled with the latest silicon technology allows this MOSFET to offer substantial system level savings and performance improvement specifically in motor drive, DC-DC and other heavy load applications.

Advanced process technology

Exceptionally small footprint and low profile

High power density

Low parasitic parameters

Dual sided cooling

175°C Operating temperature

Lead free

RoHS compliant

Halogen free

Automotive qualified

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