Infineon CoolMOS Type N-Channel MOSFET, 9.4 A, 700 V Enhancement, 3-Pin SOT-223 IPN70R1K2P7SATMA1
- N° de stock RS:
- 222-4687
- Référence fabricant:
- IPN70R1K2P7SATMA1
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 paquet de 25 unités)*
12,25 €
(TVA exclue)
14,75 €
(TVA incluse)
Informations sur le stock actuellement non accessibles - Veuillez vérifier plus tard
Unité | Prix par unité | le paquet* |
|---|---|---|
| 25 - 100 | 0,49 € | 12,25 € |
| 125 - 225 | 0,368 € | 9,20 € |
| 250 - 600 | 0,348 € | 8,70 € |
| 625 - 1225 | 0,324 € | 8,10 € |
| 1250 + | 0,299 € | 7,48 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 222-4687
- Référence fabricant:
- IPN70R1K2P7SATMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 9.4A | |
| Maximum Drain Source Voltage Vds | 700V | |
| Series | CoolMOS | |
| Package Type | SOT-223 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.2Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.9V | |
| Typical Gate Charge Qg @ Vgs | 4.8nC | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Source Voltage Vgs | 16 V | |
| Maximum Power Dissipation Pd | 6.3W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 1.8mm | |
| Width | 3.7 mm | |
| Length | 6.7mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 9.4A | ||
Maximum Drain Source Voltage Vds 700V | ||
Series CoolMOS | ||
Package Type SOT-223 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.2Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.9V | ||
Typical Gate Charge Qg @ Vgs 4.8nC | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Source Voltage Vgs 16 V | ||
Maximum Power Dissipation Pd 6.3W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 1.8mm | ||
Width 3.7 mm | ||
Length 6.7mm | ||
Automotive Standard No | ||
The Infineon design of Cool MOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. The latest Cool MOS™ P7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charger, adapter, lighting, TV, etc.
Product validation acc. JEDEC Standard
Low switching losses (Eoss) Integrated ESD protection diode
Excellent thermal behaviour
Liens connexes
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