Infineon 700V CoolMOS P7 Type N-Channel MOSFET, 12.5 A, 700 V Enhancement, 3-Pin SOT-223 IPN70R360P7SATMA1
- N° de stock RS:
- 215-2526
- Référence fabricant:
- IPN70R360P7SATMA1
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 paquet de 20 unités)*
19,76 €
(TVA exclue)
23,90 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 20 - 80 | 0,988 € | 19,76 € |
| 100 - 180 | 0,938 € | 18,76 € |
| 200 - 480 | 0,90 € | 18,00 € |
| 500 - 980 | 0,859 € | 17,18 € |
| 1000 + | 0,801 € | 16,02 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 215-2526
- Référence fabricant:
- IPN70R360P7SATMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 12.5A | |
| Maximum Drain Source Voltage Vds | 700V | |
| Series | 700V CoolMOS P7 | |
| Package Type | SOT-223 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 360mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 16.4nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 0.9V | |
| Maximum Power Dissipation Pd | 7.2W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 12.5A | ||
Maximum Drain Source Voltage Vds 700V | ||
Series 700V CoolMOS P7 | ||
Package Type SOT-223 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 360mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 16.4nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 0.9V | ||
Maximum Power Dissipation Pd 7.2W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Infineon 700V CoolMOS P7 Series MOSFET, 700V Maximum Drain Source Voltage, 12.5A Maximum Continuous Drain Current - IPN70R360P7SATMA1
This MOSFET is a high-voltage N-channel switching device designed for surface-mount power applications. It operates across an extended ambient temperature range and is suited to circuits requiring robust voltage handling, low forward conduction drop and controlled gate driving. The component is supplied in a compact SOT-223 package intended for board-mounted power stages.
Features and Benefits:
• 700V rated drain tolerance enables high-voltage switching
• 360mΩ Rds(on) reduces conduction losses during load cycles
• 12.5A continuous drain current supports moderate power throughput
• 16.4nC typical gate charge allows predictable switching behaviour
• 0.9V forward voltage reduces voltage drop in conduction mode
• 7.2W maximum dissipation manages thermal load in compact layouts
• 360mΩ Rds(on) reduces conduction losses during load cycles
• 12.5A continuous drain current supports moderate power throughput
• 16.4nC typical gate charge allows predictable switching behaviour
• 0.9V forward voltage reduces voltage drop in conduction mode
• 7.2W maximum dissipation manages thermal load in compact layouts
Applications
• Suitable for offline switch-mode power supplies
• Ideal for high-voltage primary-side converters
• Used with resonant or hard-switching topologies
• Can be used for auxiliary power rails in industrial systems
• Used for medium-current boost and flyback stages
• Ideal for high-voltage primary-side converters
• Used with resonant or hard-switching topologies
• Can be used for auxiliary power rails in industrial systems
• Used for medium-current boost and flyback stages
What gate voltage limits must be observed for safe operation?
The device must not be driven beyond ±20V between gate and source to prevent gate oxide stress.
How does the device behave across temperature extremes?
It is specified to operate from -55°C up to 150°C, allowing use in both cold-start and high-temperature environments with degraded Rds(on) expected at elevated temperatures.
What mounting considerations are relevant for thermal management?
As a surface-mount SOT-223 package, adequate copper area and thermal vias on the PCB are recommended to dissipate up to the 7.2W power limit.
How does gate charge influence drive requirements?
The typical 16.4nC gate charge defines the drive current and switching losses, informing the selection of gate drivers and snubbers for desired switching speed.
Liens connexes
- Infineon 700V CoolMOS P7 Type N-Channel MOSFET 700 V Enhancement, 3-Pin SOT-223
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- Infineon 700V CoolMOS P7 Type N-Channel MOSFET 700 V Enhancement, 3-Pin IPAK IPSA70R360P7SAKMA1
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- Infineon 700V CoolMOS P7 Type N-Channel MOSFET 700 V Enhancement, 3-Pin SOT-223
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