Infineon OptiMOS Type N-Channel MOSFET, 70 A, 40 V Enhancement, 8-Pin TDSON IPC70N04S5L4R2ATMA1
- N° de stock RS:
- 222-4662
- Référence fabricant:
- IPC70N04S5L4R2ATMA1
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 paquet de 15 unités)*
9,435 €
(TVA exclue)
11,415 €
(TVA incluse)
Ajouter 135 unités pour bénéficier d'une livraison gratuite
Dernier stock RS
- 4 890 dernière(s) unité(s), prête(s) à l'envoi d'un autre centre de distribution
Unité | Prix par unité | le paquet* |
|---|---|---|
| 15 - 60 | 0,629 € | 9,44 € |
| 75 - 135 | 0,597 € | 8,96 € |
| 150 - 360 | 0,572 € | 8,58 € |
| 375 - 735 | 0,547 € | 8,21 € |
| 750 + | 0,509 € | 7,64 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 222-4662
- Référence fabricant:
- IPC70N04S5L4R2ATMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 70A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | OptiMOS | |
| Package Type | TDSON | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 4.2mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 22nC | |
| Forward Voltage Vf | 1.1V | |
| Maximum Power Dissipation Pd | 50W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 16 V | |
| Maximum Operating Temperature | 175°C | |
| Width | 5.58 mm | |
| Length | 5.25mm | |
| Height | 1.1mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 70A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series OptiMOS | ||
Package Type TDSON | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 4.2mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 22nC | ||
Forward Voltage Vf 1.1V | ||
Maximum Power Dissipation Pd 50W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 16 V | ||
Maximum Operating Temperature 175°C | ||
Width 5.58 mm | ||
Length 5.25mm | ||
Height 1.1mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
The Infineon design of MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.
Green Product (RoHS compliant)
MSL1 up to 260°C peak reflow AEC Q101 qualified
OptiMOS™ - power MOSFET for automotive applications
Liens connexes
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