Infineon OptiMOS Type N-Channel MOSFET, 275 A, 40 V Enhancement, 8-Pin TDSON BSC010N04LSIATMA1
- N° de stock RS:
- 214-8970
- Référence fabricant:
- BSC010N04LSIATMA1
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 paquet de 5 unités)*
16,13 €
(TVA exclue)
19,515 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- 4 050 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le paquet* |
|---|---|---|
| 5 - 20 | 3,226 € | 16,13 € |
| 25 - 45 | 2,772 € | 13,86 € |
| 50 - 120 | 2,582 € | 12,91 € |
| 125 - 245 | 2,42 € | 12,10 € |
| 250 + | 2,224 € | 11,12 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 214-8970
- Référence fabricant:
- BSC010N04LSIATMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 275A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | OptiMOS | |
| Package Type | TDSON | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.05mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.7V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 139W | |
| Typical Gate Charge Qg @ Vgs | 87nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.2mm | |
| Length | 5.35mm | |
| Width | 6.1 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 275A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series OptiMOS | ||
Package Type TDSON | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.05mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.7V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 139W | ||
Typical Gate Charge Qg @ Vgs 87nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 1.2mm | ||
Length 5.35mm | ||
Width 6.1 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon New 40V and 60V product families, feature not only the industry’s lowest R DS(on) but also a perfect switching behaviour for fast switching applications. 15% lower R DS(on) and 31% lower figure of merit (R DS(on) x Q g) compared to alternative devices has been realized by advanced thin wafer technology. OptiMOS products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements.
Monolithic integrated Schottky-like diode
Optimized for synchronous rectification
100% avalanche tested
Liens connexes
- Infineon OptiMOS™ N-Channel MOSFET 40 V, 8-Pin TDSON-8 FL BSC010N04LSIATMA1
- Infineon OptiMOS™ N-Channel MOSFET 40 V, 8-Pin TDSON-8 FL ISC012N04LM6ATMA1
- Infineon OptiMOS™ N-Channel MOSFET 60 V, 8-Pin TDSON-8 FL BSC019N06NSATMA1
- Infineon OptiMOS™ 5 N-Channel MOSFET 40 V, 8-Pin TDSON-8 FL ISC015N04NM5ATMA1
- Infineon OptiMOS™ MOSFET TDSON-8 BSC014N06NSTATMA1
- Infineon OptiMOSTM5 N-Channel MOSFET 60 V, 8-Pin PG-TDSON-8 FL ISC025N08NM5LF2ATMA1
- Infineon OptiMOSTM5 N-Channel MOSFET 60 V, 8-Pin PG-TDSON-8 FL ISC015N06NM5LF2ATMA1
- Infineon OptiMOS™ N-Channel MOSFET 30 V, 8-Pin TDSON BSC011N03LSIATMA1