Infineon OptiMOS N-Channel MOSFET, 275 A, 40 V Enhancement, 8-Pin TDSON BSC010N04LSIATMA1

N° de stock RS:: 214-8969
Référence fabricant:: BSC010N04LSIATMA1
Fabricant:: Infineon

Infineon OptiMOS N-Channel MOSFET, 275 A, 40 V Enhancement, 8-Pin TDSON BSC010N04LSIATMA1

Sous-total (1 bobine de 5000 unités)*

4 565,00 €

(TVA exclue)

5 525,00 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 90,00 €

Temporairement en rupture de stock

Expédition à partir du 15 mars 2027

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Unité	Prix par unité	la bobine*
5000 +	0,913 €	4 565,00 €

*Prix donné à titre indicatif

N° de stock RS:: 214-8969
Référence fabricant:: BSC010N04LSIATMA1
Fabricant:: Infineon

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Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Infineon
	Product Type	MOSFET
	Channel Type	N
	Maximum Continuous Drain Current Id	275A
	Maximum Drain Source Voltage Vds	40V
	Package Type	TDSON
	Series	OptiMOS
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	1.05mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	87nC
	Forward Voltage Vf	700mV
	Maximum Gate Source Voltage Vgs	20V
	Maximum Power Dissipation Pd	139W
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	+175°C
	Width	6.1mm
	Height	1.2mm
	Standards/Approvals	No
	Length	5.35mm
	Automotive Standard	No

	Sélectionner tout
	Marque Infineon
	Product Type MOSFET
	Channel Type N
	Maximum Continuous Drain Current Id 275A
	Maximum Drain Source Voltage Vds 40V
	Package Type TDSON
	Series OptiMOS
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 1.05mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 87nC
	Forward Voltage Vf 700mV
	Maximum Gate Source Voltage Vgs 20V
	Maximum Power Dissipation Pd 139W
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature +175°C
	Width 6.1mm
	Height 1.2mm
	Standards/Approvals No
	Length 5.35mm
	Automotive Standard No

Datasheet - BSC010N04LSIATMA1

Infineon OptiMOS Series MOSFET, 40V Drain Source Voltage, 275A Continuous Drain Current - BSC010N04LSIATMA1

This MOSFET is a high‑current switching component designed for demanding power applications. It operates across a very wide ambient temperature range and is intended for surface‑mounted PCB implementations in Compact assemblies. The device features an enhancement‑mode N‑channel and supports gate‑drive voltages appropriate for robust switching control.

Features and Benefits:

• Low conduction resistance delivers efficient high‑current switching
• High continuous drain current enables substantial load driving
• 40 V drain‑source rating permits medium‑voltage system use
• 139 W dissipation supports elevated power handling
• 87 nC typical gate charge allows predictable switching energy
• 20 V gate‑source tolerance provides headroom for gate drive

Applications

• Suitable for high‑current DC motor drives
• Used for power distribution in battery systems
• Ideal for synchronous rectification in converters
• Can be used for server and telecoms power stages
• Used with inverter modules requiring robust switches

What temperature extremes can it withstand in operation?

It is rated for continuous use from −55 °C up to +175 °C.

What package and mounting style does it use for PCB assembly?

It is supplied in a TDSON package intended for surface mounting.

How many electrical connections are available for layout and routing?

The device uses an 8‑pin configuration for power and gate connections.

What gate drive behaviour should designers expect during switching?

Designers should plan for a typical gate charge of 87 nC when calculating drive losses and switching times.

What physical footprint should be allowed when placing the component?

The package measures 5.35 mm in length, 6.1 mm in width and 1.2 mm in height.