Infineon HEXFET Type N-Channel MOSFET & Diode, 62 A, 75 V Enhancement, 3-Pin TO-263 IRF3007STRLPBF
- N° de stock RS:
- 220-7470
- Référence fabricant:
- IRF3007STRLPBF
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 paquet de 5 unités)*
13,02 €
(TVA exclue)
15,755 €
(TVA incluse)
Ajouter 35 unités pour bénéficier d'une livraison gratuite
En stock
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 5 - 20 | 2,604 € | 13,02 € |
| 25 - 45 | 2,344 € | 11,72 € |
| 50 - 120 | 2,186 € | 10,93 € |
| 125 - 245 | 2,03 € | 10,15 € |
| 250 + | 1,904 € | 9,52 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 220-7470
- Référence fabricant:
- IRF3007STRLPBF
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET & Diode | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 62A | |
| Maximum Drain Source Voltage Vds | 75V | |
| Series | HEXFET | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 12.6mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 120W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 89nC | |
| Forward Voltage Vf | 1.3V | |
| Standards/Approvals | No | |
| Height | 4.83mm | |
| Width | 9.65 mm | |
| Length | 10.67mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET & Diode | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 62A | ||
Maximum Drain Source Voltage Vds 75V | ||
Series HEXFET | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 12.6mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 120W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 89nC | ||
Forward Voltage Vf 1.3V | ||
Standards/Approvals No | ||
Height 4.83mm | ||
Width 9.65 mm | ||
Length 10.67mm | ||
Automotive Standard No | ||
The Infineon Infineon's OptiMOS N-channel power MOSFETs are developed to increase efficiency, power density and cost-effectiveness. Designed for high performance applications and optimized for high switching frequency, OptiMOS products convince with the industry's best figure of merit. The OptiMOS power MOSFET portfolio, now complemented by Strong IRFET, creates a truly powerful combination. Benefit from a perfect match of robust and excellent price/performance of Strong IRFET MOSFETs and best-in-class technology of OptiMOS MOSFETs. Both product families answer to the highest quality standards and performance demands. The joint portfolio, covering voltages from 12V up to 300V MOSFETs, can address a broad range of needs from low to high switching frequencies such as SMPS, battery powered applications, motor control and drives, inverters, and computing.
Planar cell structure for wide SOA
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
Silicon optimized for applications switching below <100kHz
Industry standard surface-mount power package
High-current carrying capability package (up to 195 A, die-size dependent)
Capable of being wave-soldered
Liens connexes
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