Infineon HEXFET Type N-Channel MOSFET, 100 A, 75 V Enhancement, 3-Pin TO-263

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N° de stock RS:
165-8003
Référence fabricant:
IRF1407STRLPBF
Fabricant:
Infineon
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Marque

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

100A

Maximum Drain Source Voltage Vds

75V

Series

HEXFET

Package Type

TO-263

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

7mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

200W

Typical Gate Charge Qg @ Vgs

160nC

Forward Voltage Vf

1.3V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

No

Length

10.67mm

Height

9.65mm

Automotive Standard

No

Pays d'origine :
CN

N-Channel Power MOSFET 60V to 80V, Infineon


The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range Benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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