Infineon CoolMOS P6 Type N-Channel MOSFET & Diode, 109 A, 650 V Enhancement, 3-Pin TO-247
- N° de stock RS:
- 220-7456
- Référence fabricant:
- IPW60R099P6XKSA1
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 tube de 30 unités)*
146,52 €
(TVA exclue)
177,30 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- 210 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
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Unité | Prix par unité | le tube* |
|---|---|---|
| 30 - 30 | 4,884 € | 146,52 € |
| 60 - 120 | 4,639 € | 139,17 € |
| 150 + | 4,444 € | 133,32 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 220-7456
- Référence fabricant:
- IPW60R099P6XKSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET & Diode | |
| Maximum Continuous Drain Current Id | 109A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | CoolMOS P6 | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 99mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 278W | |
| Typical Gate Charge Qg @ Vgs | 70nC | |
| Forward Voltage Vf | 0.9V | |
| Maximum Operating Temperature | 150°C | |
| Length | 16.13mm | |
| Height | 21.1mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type N | ||
Product Type MOSFET & Diode | ||
Maximum Continuous Drain Current Id 109A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series CoolMOS P6 | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 99mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 278W | ||
Typical Gate Charge Qg @ Vgs 70nC | ||
Forward Voltage Vf 0.9V | ||
Maximum Operating Temperature 150°C | ||
Length 16.13mm | ||
Height 21.1mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon's Cool MOS P6 super junction MOSFET family is designed to enable higher system efficiency whilst being easy to design in. Cool MOS P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use.
Reduced gate charge (Q g)
Higher V the
Good body diode ruggedness
Optimized integrated R g
Improved dv/dt from 50V/ns
Cool MOS™ quality with over 12 years manufacturing experience in super junction technology
Improved efficiency especially in light load condition
Better efficiency in soft switching applications due to earlier turn-off
Suitable for hard- & soft-switching topologies
Optimized balance of efficiency and ease of use and good controllability of switching behaviour
High robustness and better efficiency
Outstanding quality & reliability
Liens connexes
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