Infineon CoolMOS P6 Type N-Channel MOSFET, 37.9 A, 650 V Enhancement, 4-Pin TO-220
- N° de stock RS:
- 168-5936
- Référence fabricant:
- IPP60R099P6XKSA1
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 tube de 50 unités)*
151,20 €
(TVA exclue)
182,95 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- 400 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
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Unité | Prix par unité | le tube* |
|---|---|---|
| 50 - 50 | 3,024 € | 151,20 € |
| 100 - 200 | 2,873 € | 143,65 € |
| 250 + | 2,691 € | 134,55 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 168-5936
- Référence fabricant:
- IPP60R099P6XKSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 37.9A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-220 | |
| Series | CoolMOS P6 | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 99mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Typical Gate Charge Qg @ Vgs | 70nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.9V | |
| Maximum Power Dissipation Pd | 278W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 10.36mm | |
| Width | 4.57mm | |
| Height | 15.95mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 37.9A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-220 | ||
Series CoolMOS P6 | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 99mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 30V | ||
Typical Gate Charge Qg @ Vgs 70nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.9V | ||
Maximum Power Dissipation Pd 278W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 10.36mm | ||
Width 4.57mm | ||
Height 15.95mm | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
Infineon CoolMOS™ P6 Series MOSFET, 37.9A Maximum Continuous Drain Current, 278W Maximum Power Dissipation - IPP60R099P6XKSA1
This MOSFET is tailored for high-performance applications in need of efficient power management. With a maximum continuous drain current of 37.9A and a drain-source voltage rating of 650V, it excels in automation and electronic sectors. Its enhancement mode N-channel configuration allows for effective switching capabilities, making it a preferred option for professionals in the electrical and mechanical industries.
Features & Benefits
• Low RDS(on) of 99mΩ improves switching efficiency
• Can dissipate up to 278W for enhanced durability
• Functions well under high temperatures of up to +150°C
• ESD protection above 2kV ensures dependable operation
• Suitable for both hard and soft switching applications
• Packaged in TO-220 for flexible mounting options
Applications
• Used in PFC stages for efficient power conversion
• Applicable in hard-switching PWM stages to boost performance
• Ideal for resonant switching stages in various electronic products
• Utilised in adapters and power supplies for electronic devices
• Effective in industrial automation systems demanding high power
What is the suitable gate-source voltage range for operation?
The appropriate gate-source voltage range for operation is -30V to +30V, ensuring safe and effective switching.
How does the low RDS(on) Value benefit power efficiency?
The low resistance enhances power efficiency by reducing conduction losses, leading to decreased heat generation during operation.
What is the maximum power dissipation capability during usage?
The maximum power dissipation capacity during operation is 278W, allowing robust performance under challenging conditions.
Is there any special consideration for using this component in parallel configurations?
When using in parallel, it is advisable to use ferrite beads on the gate or separate totem poles to optimise performance and minimise oscillations.
What thermal management practices should be implemented?
Effective thermal management practices include proper heat sinking and monitoring temperature during operation to maintain performance within specified limits.
Liens connexes
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