Infineon CoolMOS P6 Type N-Channel MOSFET, 20 A, 650 V Enhancement, 3-Pin TO-247 IPW60R190P6FKSA1
- N° de stock RS:
- 110-9099
- Référence fabricant:
- IPW60R190P6FKSA1
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 paquet de 5 unités)*
16,30 €
(TVA exclue)
19,70 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- 60 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le paquet* |
|---|---|---|
| 5 - 20 | 3,26 € | 16,30 € |
| 25 - 45 | 2,61 € | 13,05 € |
| 50 - 120 | 2,414 € | 12,07 € |
| 125 - 245 | 2,252 € | 11,26 € |
| 250 + | 2,088 € | 10,44 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 110-9099
- Référence fabricant:
- IPW60R190P6FKSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 20A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | CoolMOS P6 | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 190mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 37nC | |
| Forward Voltage Vf | 0.9V | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Power Dissipation Pd | 151W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 21.1mm | |
| Length | 16.13mm | |
| Width | 5.21 mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 20A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series CoolMOS P6 | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 190mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 37nC | ||
Forward Voltage Vf 0.9V | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Power Dissipation Pd 151W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 21.1mm | ||
Length 16.13mm | ||
Width 5.21 mm | ||
Automotive Standard No | ||
Infineon CoolMOS™E6/P6 series Power MOSFET
The Infineon range of CoolMOS™E6 and P6 series MOSFETs. These highly efficient devices can be used in several applications including Power Factor Correction (PFC), lighting and consumer devices as well as solar, telecoms and servers.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Liens connexes
- Infineon CoolMOS™ P6 N-Channel MOSFET 650 V, 3-Pin TO-247 IPW60R190P6FKSA1
- Infineon CoolMOS™ P6 Dual N-Channel MOSFET Transistor & Diode 650 V, 3-Pin TO-247 IPW60R099P6XKSA1
- Infineon CoolMOS™ P6 N-Channel MOSFET 650 V, 3-Pin D2PAK IPB60R160P6ATMA1
- Infineon CoolMOS™ P6 N-Channel MOSFET 600 V, 3-Pin TO-247 IPW60R280P6FKSA1
- Infineon CoolMOS™ P6 N-Channel MOSFET 650 V, 3-Pin TO-220 IPP60R099P6XKSA1
- Infineon CoolMOS™ P6 N-Channel MOSFET 600 V, 3-Pin TO-247-4 IPZ60R070P6FKSA1
- Infineon CoolMOS™ N-Channel MOSFET 650 V, 3-Pin TO-247 IPW65R018CFD7XKSA1
- Infineon CoolMOS™ C3 N-Channel MOSFET 650 V, 3-Pin TO-247 SPW20N60C3FKSA1