Infineon CoolMOS P6 Type N-Channel MOSFET, 53.5 A, 600 V Enhancement, 3-Pin TO-247 IPZ60R070P6FKSA1
- N° de stock RS:
- 214-9121
- Référence fabricant:
- IPZ60R070P6FKSA1
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 paquet de 2 unités)*
17,06 €
(TVA exclue)
20,64 €
(TVA incluse)
Ajouter 10 unités pour bénéficier d'une livraison gratuite
Temporairement en rupture de stock
- Expédition à partir du 26 novembre 2026
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 2 - 8 | 8,53 € | 17,06 € |
| 10 - 18 | 7,68 € | 15,36 € |
| 20 - 48 | 7,25 € | 14,50 € |
| 50 - 98 | 6,735 € | 13,47 € |
| 100 + | 6,225 € | 12,45 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 214-9121
- Référence fabricant:
- IPZ60R070P6FKSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 53.5A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | CoolMOS P6 | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 70mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 391W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 0.9V | |
| Typical Gate Charge Qg @ Vgs | 100nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 5.21 mm | |
| Length | 16.13mm | |
| Height | 21.1mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 53.5A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series CoolMOS P6 | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 70mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 391W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 0.9V | ||
Typical Gate Charge Qg @ Vgs 100nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 5.21 mm | ||
Length 16.13mm | ||
Height 21.1mm | ||
Automotive Standard No | ||
The Infineon CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. CoolMOS P6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter and cooler.
Easy to use/drive due to driver source pin for better control of the gate
Qualified for industrial grade applications according to JEDEC
Liens connexes
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- Infineon CoolMOS P6 Type N-Channel MOSFET 600 V Enhancement, 5-Pin VSON
- Infineon CoolMOS P6 Type N-Channel MOSFET 600 V Enhancement, 5-Pin VSON
