Infineon CoolMOS P6 Type N-Channel MOSFET, 53.5 A, 600 V Enhancement, 3-Pin TO-247 IPZ60R070P6FKSA1
- N° de stock RS:
- 214-9121
- Référence fabricant:
- IPZ60R070P6FKSA1
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 paquet de 2 unités)*
19,49 €
(TVA exclue)
23,582 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- Expédition à partir du 12 mars 2027
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le paquet* |
|---|---|---|
| 2 - 8 | 9,745 € | 19,49 € |
| 10 - 18 | 8,77 € | 17,54 € |
| 20 - 48 | 8,28 € | 16,56 € |
| 50 - 98 | 7,70 € | 15,40 € |
| 100 + | 7,11 € | 14,22 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 214-9121
- Référence fabricant:
- IPZ60R070P6FKSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 53.5A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-247 | |
| Series | CoolMOS P6 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 70mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.9V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 391W | |
| Typical Gate Charge Qg @ Vgs | 100nC | |
| Maximum Operating Temperature | 150°C | |
| Height | 21.1mm | |
| Standards/Approvals | No | |
| Length | 16.13mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 53.5A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-247 | ||
Series CoolMOS P6 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 70mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.9V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 391W | ||
Typical Gate Charge Qg @ Vgs 100nC | ||
Maximum Operating Temperature 150°C | ||
Height 21.1mm | ||
Standards/Approvals No | ||
Length 16.13mm | ||
Automotive Standard No | ||
The Infineon CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. CoolMOS P6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter and cooler.
Easy to use/drive due to driver source pin for better control of the gate
Qualified for industrial grade applications according to JEDEC
Liens connexes
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