Infineon CoolMOS P6 Type N-Channel MOSFET, 53.5 A, 600 V Enhancement, 3-Pin TO-247 IPZ60R070P6FKSA1
- N° de stock RS:
- 214-9121
- Référence fabricant:
- IPZ60R070P6FKSA1
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 paquet de 2 unités)*
17,06 €
(TVA exclue)
20,64 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- Expédition à partir du 06 octobre 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le paquet* |
|---|---|---|
| 2 - 8 | 8,53 € | 17,06 € |
| 10 - 18 | 7,68 € | 15,36 € |
| 20 - 48 | 7,25 € | 14,50 € |
| 50 - 98 | 6,735 € | 13,47 € |
| 100 + | 6,225 € | 12,45 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 214-9121
- Référence fabricant:
- IPZ60R070P6FKSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 53.5A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | CoolMOS P6 | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 70mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 100nC | |
| Forward Voltage Vf | 0.9V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 391W | |
| Maximum Operating Temperature | 150°C | |
| Length | 16.13mm | |
| Standards/Approvals | No | |
| Height | 21.1mm | |
| Width | 5.21 mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 53.5A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series CoolMOS P6 | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 70mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 100nC | ||
Forward Voltage Vf 0.9V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 391W | ||
Maximum Operating Temperature 150°C | ||
Length 16.13mm | ||
Standards/Approvals No | ||
Height 21.1mm | ||
Width 5.21 mm | ||
Automotive Standard No | ||
The Infineon CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. CoolMOS P6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter and cooler.
Easy to use/drive due to driver source pin for better control of the gate
Qualified for industrial grade applications according to JEDEC
Liens connexes
- Infineon CoolMOS™ P6 N-Channel MOSFET 600 V, 3-Pin TO-247-4 IPZ60R070P6FKSA1
- Infineon CoolMOS™ P6 N-Channel MOSFET 600 V, 3-Pin TO-247 IPW60R280P6FKSA1
- Infineon CoolMOS™ P6 N-Channel MOSFET 650 V, 3-Pin TO-247 IPW60R190P6FKSA1
- Infineon CoolMOS™ P6 N-Channel MOSFET 600 V, 3-Pin TO-220 IPP60R160P6XKSA1
- Infineon CoolMOS™ P6 N-Channel MOSFET 600 V, 3-Pin TO-220 FP IPA60R160P6XKSA1
- Infineon CoolMOS™ P6 Dual N-Channel MOSFET Transistor & Diode 650 V, 3-Pin TO-247 IPW60R099P6XKSA1
- Infineon CoolMOS™ P6 N-Channel MOSFET 600 V, 5-Pin ThinkPAK 8 x 8 IPL60R210P6AUMA1
- Infineon CoolMOS™ P6 N-Channel MOSFET 600 V, 5-Pin ThinkPAK 8 x 8 IPL60R180P6AUMA1