Infineon CoolMOS Type N-Channel MOSFET & Diode, 6.8 A, 650 V Enhancement, 3-Pin TO-251 IPS60R1K0CEAKMA1
- N° de stock RS:
- 220-7439
- Référence fabricant:
- IPS60R1K0CEAKMA1
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 paquet de 20 unités)*
11,88 €
(TVA exclue)
14,38 €
(TVA incluse)
Ajouter 180 unités pour bénéficier d'une livraison gratuite
Dernier stock RS
- 1 500 dernière(s) unité(s), prête(s) à l'envoi d'un autre centre de distribution
Unité | Prix par unité | le paquet* |
|---|---|---|
| 20 - 80 | 0,594 € | 11,88 € |
| 100 - 180 | 0,457 € | 9,14 € |
| 200 - 480 | 0,427 € | 8,54 € |
| 500 - 980 | 0,398 € | 7,96 € |
| 1000 + | 0,368 € | 7,36 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 220-7439
- Référence fabricant:
- IPS60R1K0CEAKMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET & Diode | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 6.8A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | CoolMOS | |
| Package Type | TO-251 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 13nC | |
| Forward Voltage Vf | 0.9V | |
| Maximum Power Dissipation Pd | 61W | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 150°C | |
| Width | 2.4 mm | |
| Height | 6.22mm | |
| Standards/Approvals | No | |
| Length | 6.73mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET & Diode | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 6.8A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series CoolMOS | ||
Package Type TO-251 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 13nC | ||
Forward Voltage Vf 0.9V | ||
Maximum Power Dissipation Pd 61W | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 150°C | ||
Width 2.4 mm | ||
Height 6.22mm | ||
Standards/Approvals No | ||
Length 6.73mm | ||
Automotive Standard No | ||
The Infineon Cool MOS CE is suitable for hard and soft switching applications and as modern super junction, it delivers low conduction and switching losses improving efficiency and ultimately reduces power consumption. 600V, 650V and 700V Cool MOS CE combine the optimal R DS(on) and package offering suitable in low power chargers for mobile phones and tablets.
Narrow margins between typical and max R DS(on)
Reduced energy stored in output capacitance (E oss)
Good body diode ruggedness and reduced reverse recovery charge (Q rr)
Optimized integrated R g
Low conduction losses
Low switching losses
Suitable for hard and soft switching
Easy controllable switching behaviour
Improved efficiency and consequent reduction of power consumption
Less design in effort
Easy to use
Liens connexes
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- Infineon CoolMOS Type N-Channel MOSFET 700 V Enhancement, 3-Pin TO-251
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