Infineon CoolMOS Type N-Channel MOSFET & Diode, 6.8 A, 650 V Enhancement, 3-Pin TO-251

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Sous-total (1 tube de 75 unités)*

19,05 €

(TVA exclue)

23,025 €

(TVA incluse)

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Unité
Prix par unité
le tube*
75 +0,254 €19,05 €

*Prix donné à titre indicatif

N° de stock RS:
220-7438
Référence fabricant:
IPS60R1K0CEAKMA1
Fabricant:
Infineon
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Marque

Infineon

Channel Type

Type N

Product Type

MOSFET & Diode

Maximum Continuous Drain Current Id

6.8A

Maximum Drain Source Voltage Vds

650V

Series

CoolMOS

Package Type

TO-251

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

1Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

0.9V

Maximum Power Dissipation Pd

61W

Typical Gate Charge Qg @ Vgs

13nC

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

150°C

Standards/Approvals

No

Width

2.4 mm

Height

6.22mm

Length

6.73mm

Automotive Standard

No

The Infineon Cool MOS CE is suitable for hard and soft switching applications and as modern super junction, it delivers low conduction and switching losses improving efficiency and ultimately reduces power consumption. 600V, 650V and 700V Cool MOS CE combine the optimal R DS(on) and package offering suitable in low power chargers for mobile phones and tablets.

Narrow margins between typical and max R DS(on)

Reduced energy stored in output capacitance (E oss)

Good body diode ruggedness and reduced reverse recovery charge (Q rr)

Optimized integrated R g

Low conduction losses

Low switching losses

Suitable for hard and soft switching

Easy controllable switching behaviour

Improved efficiency and consequent reduction of power consumption

Less design in effort

Easy to use

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