Infineon CoolMOS P7 N-Channel MOSFET & Diode, 100 A, 650 V Enhancement, 5-Pin VSON IPL60R105P7AUMA1

N° de stock RS:: 220-7432
Référence fabricant:: IPL60R105P7AUMA1
Fabricant:: Infineon

Infineon CoolMOS P7 N-Channel MOSFET & Diode, 100 A, 650 V Enhancement, 5-Pin VSON IPL60R105P7AUMA1

Sous-total (1 bobine de 3000 unités)*

5 373,00 €

(TVA exclue)

6 501,00 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 90,00 €

Temporairement en rupture de stock

Expédition à partir du 19 juillet 2027

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Unité	Prix par unité	la bobine*
3000 +	1,791 €	5 373,00 €

*Prix donné à titre indicatif

N° de stock RS:: 220-7432
Référence fabricant:: IPL60R105P7AUMA1
Fabricant:: Infineon

Spécifications

Documentation technique

Législations et de normes

Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Infineon
	Channel Type	N
	Product Type	MOSFET & Diode
	Maximum Continuous Drain Current Id	100A
	Maximum Drain Source Voltage Vds	650V
	Package Type	VSON
	Series	CoolMOS P7
	Mount Type	Surface
	Pin Count	5
	Maximum Drain Source Resistance Rds	105mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	45nC
	Minimum Operating Temperature	-40°C
	Maximum Power Dissipation Pd	137W
	Forward Voltage Vf	900mV
	Maximum Gate Source Voltage Vgs	20V
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Width	8.1mm
	Height	1.1mm
	Length	8.1mm
	Automotive Standard	No

	Sélectionner tout
	Marque Infineon
	Channel Type N
	Product Type MOSFET & Diode
	Maximum Continuous Drain Current Id 100A
	Maximum Drain Source Voltage Vds 650V
	Package Type VSON
	Series CoolMOS P7
	Mount Type Surface
	Pin Count 5
	Maximum Drain Source Resistance Rds 105mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 45nC
	Minimum Operating Temperature -40°C
	Maximum Power Dissipation Pd 137W
	Forward Voltage Vf 900mV
	Maximum Gate Source Voltage Vgs 20V
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Width 8.1mm
	Height 1.1mm
	Length 8.1mm
	Automotive Standard No

Datasheet - IPL60R105P7AUMA1

Infineon CoolMOS P7 Series MOSFET & Diode, 650V Maximum Drain Source Voltage, 100A Maximum Continuous Drain Current - IPL60R105P7AUMA1

This MOSFET & diode is a high-voltage power switching device designed for surface-mount applications in power conversion and switching contexts. It combines an N-channel enhancement-mode transistor with an integrated diode to handle elevated drain-source voltages and substantial continuous currents while operating across a wide temperature range.

Features and Benefits:

• 650V drain-source rating enables high-voltage switching applications
• 100A continuous drain current supports heavy load handling
• 105mΩ maximum Rds(on) reduces conduction losses in power stages
• 137W maximum power dissipation permits elevated thermal loading
• 45nC typical gate charge at Vgs 20V balances drive requirements
• VSON 5-pin package supports Compact surface-mount integration

Applications

• Suitable for SMPS primary-side switching in high-voltage converters
• Ideal for offline power supplies requiring a high-voltage MOSFET diode
• Used for synchronous rectification in high-power converter designs
• Can be used for industrial motor-drive front-end stages
• Suitable for DC-DC converters handling substantial continuous current

What gate-drive voltage range is permitted for safe operation?

The device accepts gate-source voltages up to 20V while operating as an enhancement-mode N-channel device.

What thermal extremes can it withstand during operation?

It is specified for continuous operation from −40°C up to 150°C.

How does the package influence mounting and layout?

The VSON 5-pin surface-mount package enables low-profile mounting and straightforward PCB soldering for Compact assemblies.

What is the typical switching charge designers must budget for in gate drivers?

Expect a typical total gate charge around 45nC at the rated gate voltage, which informs driver current and switching-loss calculations.