Infineon CoolMOS P7 Type N-Channel MOSFET & Diode, 100 A, 650 V Enhancement, 5-Pin VSON
- N° de stock RS:
- 220-7432
- Référence fabricant:
- IPL60R105P7AUMA1
- Fabricant:
- Infineon
Sous-total (1 bobine de 3000 unités)*
4 788,00 €
(TVA exclue)
5 793,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- Expédition à partir du 12 mars 2027
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | la bobine* |
|---|---|---|
| 3000 + | 1,596 € | 4 788,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 220-7432
- Référence fabricant:
- IPL60R105P7AUMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET & Diode | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | VSON | |
| Series | CoolMOS P7 | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 105mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 137W | |
| Forward Voltage Vf | 0.9V | |
| Typical Gate Charge Qg @ Vgs | 45nC | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 1.1mm | |
| Length | 8.1mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET & Diode | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type VSON | ||
Series CoolMOS P7 | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 105mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 137W | ||
Forward Voltage Vf 0.9V | ||
Typical Gate Charge Qg @ Vgs 45nC | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 1.1mm | ||
Length 8.1mm | ||
Automotive Standard No | ||
The Infineon 600V Cool MOS P7 super junction (SJ) MOSFET is the successor to the 600V Cool MOS P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the Cool MOS 7th generation platform ensure its high efficiency.
600V P7 enables excellent FOM RDS(on)xEoss and RDS(on)xQG
ESD ruggedness of ≥ 2kV (HBM class 2)
Integrated gate resistor RG
Rugged body diode
Wide portfolio in through hole and surface mount packages
Both standard grade and industrial grade parts are available
Excellent FOMs RDS(on)xQG / RDS(on)xEoss enable higher efficiency
Ease-of-use in manufacturing environments by stopping ESD failures occurring
Integrated RG reduces MOSFET oscillation sensitivity
MOSFET is suitable for both hard and resonant switching topologies such as PFC and LLC
Excellent ruggedness during hard commutation of the body diode seen in LLC topology
Suitable for a wide variety of end applications and output powers
Parts available suitable for consumer and industrial applications
Liens connexes
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