Infineon CoolMOS P7 Type N-Channel MOSFET & Diode, 57.2 A, 650 V Enhancement TO-263

Voir l’ensemble des MOSFETs

Sous-total (1 bobine de 1000 unités)*

1 434,00 €

(TVA exclue)

1 735,00 €

(TVA incluse)

Add to Basket
sélectionner ou taper la quantité
Temporairement en rupture de stock
  • Expédition à partir du 08 mai 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité
Prix par unité
la bobine*
1000 +1,434 €1 434,00 €

*Prix donné à titre indicatif

N° de stock RS:
220-7392
Référence fabricant:
IPB65R190CFDAATMA1
Fabricant:
Infineon
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout

Marque

Infineon

Channel Type

Type N

Product Type

MOSFET & Diode

Maximum Continuous Drain Current Id

57.2A

Maximum Drain Source Voltage Vds

650V

Package Type

TO-263

Series

CoolMOS P7

Mount Type

Surface

Maximum Drain Source Resistance Rds

190mΩ

Channel Mode

Enhancement

Standards/Approvals

No

Automotive Standard

No

The Infineon 650V Cool MOS CFDA Super junction (SJ) MOSFET is Infineon's second generation of market leading automotive qualified high voltage Cool MOS power MOSFETs. In addition to the well-known attributes of high quality and reliability required by the automotive industry, the 650V Cool MOS CFDA series provides also an integrated fast body diode.

First 650V automotive qualified technology with integrated fast body diode on the market

Limited voltage overshoot during hard commutation – self limiting di/dt and dv/dt

Low gate charge value Q g

Low Q rr at repetitive commutation on body diode & low Q oss

Reduced turn on and turn of delay times

Increased safety margin due to higher breakdown voltage

Reduced EMI appearance and easy to design in

Better light load efficiency

Lower switching losses

Higher switching frequency and/or higher duty cycle possible

High quality and reliability

Liens connexes