Infineon C7 GOLD Type N-Channel MOSFET & Diode, 83 A, 650 V Enhancement, 10-Pin HDSOP IPDD60R080G7XTMA1
- N° de stock RS:
- 220-7418
- Référence fabricant:
- IPDD60R080G7XTMA1
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 paquet de 2 unités)*
8,88 €
(TVA exclue)
10,74 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- 1 700 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le paquet* |
|---|---|---|
| 2 - 8 | 4,44 € | 8,88 € |
| 10 - 18 | 4,04 € | 8,08 € |
| 20 - 48 | 3,77 € | 7,54 € |
| 50 - 98 | 3,50 € | 7,00 € |
| 100 + | 3,24 € | 6,48 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 220-7418
- Référence fabricant:
- IPDD60R080G7XTMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET & Diode | |
| Maximum Continuous Drain Current Id | 83A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | HDSOP | |
| Series | C7 GOLD | |
| Mount Type | Surface | |
| Pin Count | 10 | |
| Maximum Drain Source Resistance Rds | 80mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 42nC | |
| Maximum Power Dissipation Pd | 174W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 0.8V | |
| Width | 2.35 mm | |
| Length | 6.6mm | |
| Height | 21.11mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type N | ||
Product Type MOSFET & Diode | ||
Maximum Continuous Drain Current Id 83A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type HDSOP | ||
Series C7 GOLD | ||
Mount Type Surface | ||
Pin Count 10 | ||
Maximum Drain Source Resistance Rds 80mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 42nC | ||
Maximum Power Dissipation Pd 174W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 0.8V | ||
Width 2.35 mm | ||
Length 6.6mm | ||
Height 21.11mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon technologies introduces Double DPAK (DDPAK), the first top-side cooled surface mount device (SMD) package addressing high power SMPS applications such as PC power, solar, server and telecom. The benefits of the already existing high voltage technology 600V Cool MOS G7 super junction (SJ) MOSFETis combined with the innovative concept of top-side cooling, providing a system solution for high current hard switching topologies such as PFC and a high-end efficiency solution for LLC topologies.
Gives best-in-class FOM RDS(on) x Eoss and RDS(on) x Qg
Innovative top-side cooling concept
Inbuilt 4th pin Kelvin source configuration and low parasitic source inductance
TCOB capability of >> 2.000 cycles, MSL1 compliant and total Pb-free
Enabling highest energy efficiency
Thermal decoupling of board and semiconductor allows to overcome thermal PCB limits
Reduced parasitic source inductance improves e efficiency and ease-of-use
Enables higher power density solutions
Exceeding the highest quality standards
Liens connexes
- Infineon CoolMOS™ G7 Dual N-Channel MOSFET Transistor & Diode 650 V, 10-Pin DDPAK IPDD60R080G7XTMA1
- Infineon CoolMOS™ G7 Dual N-Channel MOSFET Transistor & Diode 650 V, 10-Pin DDPAK IPDD60R150G7XTMA1
- Infineon CoolMOS™ G7 N-Channel MOSFET 600 V, 10-Pin DDPAK IPDD60R190G7XTMA1
- Infineon CoolMOS™ N-Channel MOSFET Transistor & Diode 650 V, 3-Pin DPAK IPD60R170CFD7ATMA1
- Infineon CoolMOS™ CE N-Channel MOSFET 650 V, 3-Pin DPAK IPD60R1K0CEAUMA1
- Infineon CoolMOS™ CE N-Channel MOSFET 650 V, 3-Pin DPAK IPD65R1K0CEAUMA1
- Infineon CoolMOS™ C6 N-Channel MOSFET 650 V, 3-Pin DPAK IPD60R380C6ATMA1
- Infineon CoolMOS™ Silicon N-Channel MOSFET 650 V, 3-Pin DPAK IPD60R280CFD7ATMA1