Infineon C7 GOLD Type N-Channel MOSFET, 23 A, 650 V Enhancement, 8-Pin HSOF
- N° de stock RS:
- 219-6012
- Référence fabricant:
- IPT60R150G7XTMA1
- Fabricant:
- Infineon
Sous-total (1 bobine de 2000 unités)*
2 342,00 €
(TVA exclue)
2 834,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- Expédition à partir du 06 octobre 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | la bobine* |
|---|---|---|
| 2000 + | 1,171 € | 2 342,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 219-6012
- Référence fabricant:
- IPT60R150G7XTMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 23A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | C7 GOLD | |
| Package Type | HSOF | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 150mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 23nC | |
| Forward Voltage Vf | 0.8V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 106W | |
| Maximum Operating Temperature | 150°C | |
| Width | 10.58 mm | |
| Length | 10.1mm | |
| Height | 2.4mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 23A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series C7 GOLD | ||
Package Type HSOF | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 150mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 23nC | ||
Forward Voltage Vf 0.8V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 106W | ||
Maximum Operating Temperature 150°C | ||
Width 10.58 mm | ||
Length 10.1mm | ||
Height 2.4mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon CoolMOS C7 Gold superjunction MOSFET series (G7) brings together the benefits of the improved 600V CoolMOS™ C7 Gold technology, 4pin Kelvin source capability and the improved thermal properties of the TO-Leadless (TOLL) package to enable a possible SMD solution for high current hard switching topologies such as power factor correction (PFC) up to 3kW and for resonant circuits such as high end LLC.
Gives best-in-class FOM R DS(on)xE oss and R DS(on)xQ G
Enables best-in-class R DS(on) in smallest footprint
Inbuilt 4 th pin Kelvin source configuration and low parasitic source inductance (∼1nH)
Is MSL1 compliant, total Pb-free, has easy visual inspection grooved leads
Enables improved thermal performance R th
Higher efficiency due to the improved C7 Gold technology and faster switching
Improved power density due to low R DS(on) in small footprint, by either replacing TO-packages (height restrictions) or paralleling SMD packages due to thermal or R DS(on) requirements
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