Infineon CoolMOS CSFD Type N-Channel MOSFET, 236 A, 650 V Enhancement, 3-Pin TO-247 IPW60R037CSFDXKSA1
- N° de stock RS:
- 219-6021
- Référence fabricant:
- IPW60R037CSFDXKSA1
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 unité)*
8,10 €
(TVA exclue)
9,80 €
(TVA incluse)
Ajouter 11 unités pour bénéficier d'une livraison gratuite
Temporairement en rupture de stock
- Expédition à partir du 21 mai 2026
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Unité | Prix par unité |
|---|---|
| 1 - 4 | 8,10 € |
| 5 - 9 | 7,45 € |
| 10 - 24 | 6,96 € |
| 25 - 49 | 6,48 € |
| 50 + | 5,99 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 219-6021
- Référence fabricant:
- IPW60R037CSFDXKSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 236A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-247 | |
| Series | CoolMOS CSFD | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 37mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 245W | |
| Typical Gate Charge Qg @ Vgs | 136nC | |
| Maximum Operating Temperature | 150°C | |
| Length | 16.13mm | |
| Width | 21.1 mm | |
| Height | 5.21mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 236A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-247 | ||
Series CoolMOS CSFD | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 37mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 245W | ||
Typical Gate Charge Qg @ Vgs 136nC | ||
Maximum Operating Temperature 150°C | ||
Length 16.13mm | ||
Width 21.1 mm | ||
Height 5.21mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon IPW60R037CSFD CoolMOS superjunction MOSFET is an optimized device tailored to address the off-board EV-charging market segment. Thanks to low gate charge (Qg) and improved switching behaviour it offers highest efficiency in the targeted market. In addition to that it comes along with an integrated fast body diode and tremendously reduced reverse recovery charge (Qrr) leading to highest reliability in resonant topologies. Due to these features the IPW60R037CSFD meets the efficiency and reliability standards of the off-board EV-charging station market and furthermore supports high power density solutions.
Ultra-fast body diode
Best-in-class reverse recovery charge (Qrr)
Improved reverse diode dv/dt and dif/dt ruggedness
Liens connexes
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