Infineon CoolMOS CSFD Type N-Channel MOSFET, 360 A, 650 V Enhancement, 3-Pin TO-247 IPW60R024CFD7XKSA1
- N° de stock RS:
- 219-6017
- Référence fabricant:
- IPW60R024CFD7XKSA1
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 unité)*
11,75 €
(TVA exclue)
14,22 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- 47 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
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Unité | Prix par unité |
|---|---|
| 1 - 4 | 11,75 € |
| 5 - 9 | 10,33 € |
| 10 - 24 | 9,62 € |
| 25 - 49 | 9,05 € |
| 50 + | 8,34 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 219-6017
- Référence fabricant:
- IPW60R024CFD7XKSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 360A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | CoolMOS CSFD | |
| Package Type | TO-247 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 24mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 183nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 320W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 150°C | |
| Width | 21.1 mm | |
| Height | 5.21mm | |
| Standards/Approvals | No | |
| Length | 16.13mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 360A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series CoolMOS CSFD | ||
Package Type TO-247 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 24mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 183nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 320W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 150°C | ||
Width 21.1 mm | ||
Height 5.21mm | ||
Standards/Approvals No | ||
Length 16.13mm | ||
Automotive Standard No | ||
The Infineon CoolMOS CFD7 Superjunction MOSFET IPW60R024CFD7 in 600V is ideally suited for resonant topologies in high power SMPS, such as server, telecom and EV charging stations, where it enables significant efficiency improvements. As successor to the CFD2 SJ MOSFET family it comes with reduced gate charge, improved turn-off behaviour and up to 69% reduced reverse recovery charge compared to competitors.
Ultra-fast body diode
Best-in-class reverse recovery charge (Qrr)
Improved reverse diode dv/dt and dif/dt ruggedness
Liens connexes
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