Infineon CoolMOS Type N-Channel MOSFET, 77.5 A, 650 V Enhancement, 3-Pin TO-247 IPW60R041P6FKSA1
- N° de stock RS:
- 222-4721
- Référence fabricant:
- IPW60R041P6FKSA1
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 unité)*
11,07 €
(TVA exclue)
13,39 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- Plus 359 unité(s) expédiée(s) à partir du 01 janvier 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité |
|---|---|
| 1 - 9 | 11,07 € |
| 10 - 24 | 10,52 € |
| 25 - 49 | 10,07 € |
| 50 - 99 | 9,63 € |
| 100 + | 8,96 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 222-4721
- Référence fabricant:
- IPW60R041P6FKSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 77.5A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | CoolMOS | |
| Package Type | TO-247 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 41mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 481W | |
| Typical Gate Charge Qg @ Vgs | 170nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.9V | |
| Width | 21.1 mm | |
| Height | 5.21mm | |
| Length | 16.13mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 77.5A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series CoolMOS | ||
Package Type TO-247 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 41mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 481W | ||
Typical Gate Charge Qg @ Vgs 170nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.9V | ||
Width 21.1 mm | ||
Height 5.21mm | ||
Length 16.13mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon design of Cool MOS is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. 600V Cool MOS™ C7 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The 600V C7 is the first technology ever with RDS(on)*A below 1Ohm*mm².
Pb-free lead plating; RoHS compliant
Superior thermal resistance 100% avalanche tested
Halogen-free according to IEC61249-2-23
Liens connexes
- Infineon CoolMOS™ Silicon N-Channel MOSFET 650 V, 3-Pin TO-247 IPW60R041P6FKSA1
- Infineon CoolMOS™ C6 N-Channel MOSFET 650 V, 3-Pin TO-247 IPW60R041C6FKSA1
- Infineon CoolMOS™ Silicon N-Channel MOSFET 650 V, 3-Pin TO-247 IPW60R018CFD7XKSA1
- Infineon CoolMOS™ Silicon N-Channel MOSFET 650 V, 3-Pin TO-247 IPW60R170CFD7XKSA1
- Infineon CoolMOS™ N-Channel MOSFET 650 V, 3-Pin TO-247 IPW65R018CFD7XKSA1
- Infineon CoolMOS™ C3 N-Channel MOSFET 650 V, 3-Pin TO-247 SPW20N60C3FKSA1
- Infineon CoolMOS™ C3 N-Channel MOSFET 650 V, 3-Pin TO-247 SPW35N60C3FKSA1
- Infineon CoolMOS™ C6 N-Channel MOSFET 650 V, 3-Pin TO-247 IPW60R160C6FKSA1