STMicroelectronics SCTL90N N-Channel MOSFET, 40 A, 650 V, 5-Pin SCTL90N65G2V
- N° de stock RS:
- 219-4225
- Référence fabricant:
- SCTL90N65G2V
- Fabricant:
- STMicroelectronics
Sous-total (1 bobine de 3000 unités)*
75 012,00 €
(TVA exclue)
90 765,00 €
(TVA incluse)
Informations sur le stock actuellement non accessibles - Veuillez vérifier plus tard
Unité | Prix par unité | la bobine* |
|---|---|---|
| 3000 + | 25,004 € | 75 012,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 219-4225
- Référence fabricant:
- SCTL90N65G2V
- Fabricant:
- STMicroelectronics
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | STMicroelectronics | |
| Series | SCTL90N | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current (Id) | 40 A | |
| Maximum Drain Source Voltage (Vds) | 650 V | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance (Rds) | 0.24 Ω | |
| Mount Type | Surface | |
| Sélectionner tout | ||
|---|---|---|
Marque STMicroelectronics | ||
Series SCTL90N | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current (Id) 40 A | ||
Maximum Drain Source Voltage (Vds) 650 V | ||
Pin Count 5 | ||
Maximum Drain Source Resistance (Rds) 0.24 Ω | ||
Mount Type Surface | ||
The STMicroelectronics silicon carbide power MOSFET device has been developed using STs Advanced and innovative 2nd generation Sic MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.
Very fast and robust intrinsic body diode
Low capacitances
Source sensing pin for increased efficiency
Liens connexes
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