STMicroelectronics ST8L65 Type N-Channel Single MOSFETs, 58 A, 650 V Enhancement, 5-Pin PowerFLAT ST8L65N044M9
- N° de stock RS:
- 648-109
- Référence fabricant:
- ST8L65N044M9
- Fabricant:
- STMicroelectronics
Offre groupée disponible
Sous-total (1 unité)*
6,04 €
(TVA exclue)
7,31 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
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- 290 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
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Unité | Prix par unité |
|---|---|
| 1 - 9 | 6,04 € |
| 10 - 49 | 4,88 € |
| 50 - 99 | 3,74 € |
| 100 + | 3,01 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 648-109
- Référence fabricant:
- ST8L65N044M9
- Fabricant:
- STMicroelectronics
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | Single MOSFETs | |
| Maximum Continuous Drain Current Id | 58A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | ST8L65 | |
| Package Type | PowerFLAT | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 44mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 110nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 166W | |
| Maximum Gate Source Voltage Vgs | ±30 V | |
| Forward Voltage Vf | 1.6V | |
| Maximum Operating Temperature | 150°C | |
| Width | 8.10 mm | |
| Standards/Approvals | No | |
| Height | 0.95mm | |
| Length | 8.10mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque STMicroelectronics | ||
Channel Type Type N | ||
Product Type Single MOSFETs | ||
Maximum Continuous Drain Current Id 58A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series ST8L65 | ||
Package Type PowerFLAT | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 44mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 110nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 166W | ||
Maximum Gate Source Voltage Vgs ±30 V | ||
Forward Voltage Vf 1.6V | ||
Maximum Operating Temperature 150°C | ||
Width 8.10 mm | ||
Standards/Approvals No | ||
Height 0.95mm | ||
Length 8.10mm | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
The STMicroelectronics N-channel Power MOSFET is based on the most innovative super-junction MDmesh M9 technology, suitable for medium/high voltage MOSFETs featuring very low RDS(on) per area. The silicon based M9 technology benefits from a multi-drain manufacturing process which allows an enhanced device structure. It has one of the lower on-resistance and reduced gate charge values, among all silicon based fast switching super-junction Power MOSFETs, making it particularly suitable for applications that require superior power density and outstanding efficiency.
Excellent switching performance
Easy to drive
100 percent avalanche tested
Excellent switching performance
PowerFLAT 8x8 HV package
RoHS compliant
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