Infineon IPP N-Channel MOSFET, 137 A, 100 V Enhancement, 3-Pin TO-220 IPP045N10N3GXKSA1
- N° de stock RS:
- 217-2554
- Référence fabricant:
- IPP045N10N3GXKSA1
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 tube de 50 unités)*
91,45 €
(TVA exclue)
110,65 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- Plus 50 unité(s) expédiée(s) à partir du 12 octobre 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le tube* |
|---|---|---|
| 50 - 50 | 1,829 € | 91,45 € |
| 100 - 200 | 1,536 € | 76,80 € |
| 250 - 450 | 1,464 € | 73,20 € |
| 500 - 950 | 1,383 € | 69,15 € |
| 1000 + | 1,348 € | 67,40 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 217-2554
- Référence fabricant:
- IPP045N10N3GXKSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 137A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | IPP | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 4.5mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 88nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 214W | |
| Maximum Operating Temperature | 175°C | |
| Width | 4.57mm | |
| Standards/Approvals | No | |
| Length | 10.36mm | |
| Height | 29.95mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 137A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series IPP | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 4.5mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 88nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 214W | ||
Maximum Operating Temperature 175°C | ||
Width 4.57mm | ||
Standards/Approvals No | ||
Length 10.36mm | ||
Height 29.95mm | ||
Automotive Standard No | ||
The Infineon's 100V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and FOM (figure of merit).
Excellent switching performance World's lowest R DS(on)
Very low Q g and Q gd
Excellent gate charge x R DS(on) product (FOM)
RoHS compliant-halogen free
MSL1 rated 2
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