Infineon IPD Type N-Channel MOSFET, 13 A, 800 V Enhancement, 3-Pin TO-252

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Sous-total (1 bobine de 2500 unités)*

2 472,50 €

(TVA exclue)

2 992,50 €

(TVA incluse)

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  • Expédition à partir du 15 mai 2026
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Unité
Prix par unité
la bobine*
2500 +0,989 €2 472,50 €

*Prix donné à titre indicatif

N° de stock RS:
217-2533
Référence fabricant:
IPD80R360P7ATMA1
Fabricant:
Infineon
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Marque

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

13A

Maximum Drain Source Voltage Vds

800V

Package Type

TO-252

Series

IPD

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

360mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

12nC

Minimum Operating Temperature

-40°C

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.2V

Maximum Power Dissipation Pd

42W

Maximum Operating Temperature

150°C

Standards/Approvals

No

Height

2.41mm

Length

6.73mm

Width

6.22 mm

Automotive Standard

AEC-Q101

The Infineon 800V CoolMOS™ P7 superjunction MOSFET series is a perfect fit for low power SMPS applications by fully addressing market needs in performance, ease-of-use and price/performance ratio. It mainly focuses on flyback applications including adapter and charger, LED driver, audio SMPS, AUX and industrial power. This new product family offers up to 0.6% efficiency gain and 2°C to 8°C lower MOSFET temperature compared to its predecessor as well as to competitor parts tested in typical flyback applications. It also enables higher power density designs through lower switching losses and better DPAK R DS(on) products. Overall, it helps customers save BOM cost and reduce assembly effort.

Best-in-class FOM RDS(on)*Eoss; reduced Qg, Ciss, and Coss

Best-in-class DPAK RDS(on)

Best-in-class V(GS)th of 3V and smallest V(GS)th variation of ±0.5V

Integrated Zener Diode ESD protection

Fully optimized portfolio

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