Taiwan Semiconductor TSM025 Type N-Channel MOSFET, 67 A, 80 V Enhancement, 8-Pin PDFN56
- N° de stock RS:
- 216-9677
- Référence fabricant:
- TSM089N08LCR
- Fabricant:
- Taiwan Semiconductor
Actuellement indisponible
Nous ne savons pas si cet article sera de nouveau en stock, il n'est plus vendu par le fabricant.
- N° de stock RS:
- 216-9677
- Référence fabricant:
- TSM089N08LCR
- Fabricant:
- Taiwan Semiconductor
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Taiwan Semiconductor | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 67A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | PDFN56 | |
| Series | TSM025 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 8.9mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 90nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 83W | |
| Maximum Operating Temperature | 155°C | |
| Length | 6mm | |
| Standards/Approvals | No | |
| Height | 1mm | |
| Width | 5 mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Taiwan Semiconductor | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 67A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type PDFN56 | ||
Series TSM025 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 8.9mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 90nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 83W | ||
Maximum Operating Temperature 155°C | ||
Length 6mm | ||
Standards/Approvals No | ||
Height 1mm | ||
Width 5 mm | ||
Automotive Standard No | ||
The Taiwan semiconductor single N channel power MOSFET transistors, stands for Metal Oxide Semiconductor Field-Effect Transistors. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.
Low RDS(ON) to minimize conductive losses Low gate charge for fast power switching 100% UIS and Rg tested
Liens connexes
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