Taiwan Semiconductor TSM025 Type N-Channel MOSFET, 35 A, 60 V Enhancement, 8-Pin PDFN56

Voir l’ensemble des MOSFETs
Actuellement indisponible
Nous ne savons pas si cet article sera de nouveau disponible. RS a l'intention de le retirer de son assortiment sous peu.
N° de stock RS:
216-9701
Référence fabricant:
TSM220NB06CR
Fabricant:
Taiwan Semiconductor
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout

Marque

Taiwan Semiconductor

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

35A

Maximum Drain Source Voltage Vds

60V

Package Type

PDFN56

Series

TSM025

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

22mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

68W

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1V

Typical Gate Charge Qg @ Vgs

23nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Length

6.2mm

Width

4.2 mm

Standards/Approvals

WEEE 2002/96/EC, RoHS 2011/65/EU, IEC 61249-2-21

Height

1.1mm

Automotive Standard

No

The Taiwan semiconductor single N channel power MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.

Low RDS(ON) to minimize conductive losses Low gate charge for fast power switching 100% UIS and Rg tested

Liens connexes