Taiwan Semiconductor TSM025 Type N-Channel MOSFET, 67 A, 80 V Enhancement, 8-Pin PDFN56 TSM089N08LCR
- N° de stock RS:
- 216-9679
- Référence fabricant:
- TSM089N08LCR
- Fabricant:
- Taiwan Semiconductor
Offre groupée disponible
Sous-total (1 paquet de 10 unités)*
36,67 €
(TVA exclue)
44,37 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En voie de retrait du marché
- 1 640 dernière(s) unité(s), prête(s) à l'envoi d'un autre centre de distribution
Unité | Prix par unité | le paquet* |
|---|---|---|
| 10 - 40 | 3,667 € | 36,67 € |
| 50 - 90 | 3,594 € | 35,94 € |
| 100 - 240 | 3,304 € | 33,04 € |
| 250 - 990 | 3,238 € | 32,38 € |
| 1000 + | 3,00 € | 30,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 216-9679
- Référence fabricant:
- TSM089N08LCR
- Fabricant:
- Taiwan Semiconductor
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Taiwan Semiconductor | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 67A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Series | TSM025 | |
| Package Type | PDFN56 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 8.9mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 83W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1V | |
| Typical Gate Charge Qg @ Vgs | 90nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 155°C | |
| Height | 1mm | |
| Standards/Approvals | No | |
| Width | 5 mm | |
| Length | 6mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Taiwan Semiconductor | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 67A | ||
Maximum Drain Source Voltage Vds 80V | ||
Series TSM025 | ||
Package Type PDFN56 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 8.9mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 83W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1V | ||
Typical Gate Charge Qg @ Vgs 90nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 155°C | ||
Height 1mm | ||
Standards/Approvals No | ||
Width 5 mm | ||
Length 6mm | ||
Automotive Standard No | ||
The Taiwan semiconductor single N channel power MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.
Low RDS(ON) to minimize conductive losses Low gate charge for fast power switching 100% UIS and Rg tested
Liens connexes
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