Taiwan Semiconductor TSM025 Type N-Channel MOSFET, 67 A, 80 V Enhancement, 8-Pin PDFN56 TSM089N08LCR
- N° de stock RS:
- 216-9679
- Référence fabricant:
- TSM089N08LCR
- Fabricant:
- Taiwan Semiconductor
Offre groupée disponible
Sous-total (1 paquet de 10 unités)*
36,67 €
(TVA exclue)
44,37 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En voie de retrait du marché
- 1 640 dernière(s) unité(s), prête(s) à l'envoi d'un autre centre de distribution
Unité | Prix par unité | le paquet* |
|---|---|---|
| 10 - 40 | 3,667 € | 36,67 € |
| 50 - 90 | 3,594 € | 35,94 € |
| 100 - 240 | 3,304 € | 33,04 € |
| 250 - 990 | 3,238 € | 32,38 € |
| 1000 + | 3,00 € | 30,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 216-9679
- Référence fabricant:
- TSM089N08LCR
- Fabricant:
- Taiwan Semiconductor
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Taiwan Semiconductor | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 67A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | PDFN56 | |
| Series | TSM025 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 8.9mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 83W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 90nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 155°C | |
| Standards/Approvals | No | |
| Width | 5 mm | |
| Length | 6mm | |
| Height | 1mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Taiwan Semiconductor | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 67A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type PDFN56 | ||
Series TSM025 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 8.9mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 83W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 90nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 155°C | ||
Standards/Approvals No | ||
Width 5 mm | ||
Length 6mm | ||
Height 1mm | ||
Automotive Standard No | ||
The Taiwan semiconductor single N channel power MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.
Low RDS(ON) to minimize conductive losses Low gate charge for fast power switching 100% UIS and Rg tested
Liens connexes
- Taiwan Semiconductor TSM025 Type N-Channel MOSFET 80 V Enhancement, 8-Pin PDFN56
- Taiwan Semiconductor TSM025 Type N-Channel MOSFET 30 V Enhancement, 8-Pin PDFN56
- Taiwan Semiconductor TSM025 Type N-Channel MOSFET 30 V Enhancement, 8-Pin PDFN56 TSM055N03PQ56
- Taiwan Semiconductor TSM025 Type N-Channel MOSFET 30 V Enhancement, 8-Pin PDFN56 TSM055N03EPQ56
- Taiwan Semiconductor TSM025 Type N-Channel MOSFET 60 V Enhancement, 8-Pin PDFN56
- Taiwan Semiconductor TSM025 Type N-Channel MOSFET 150 V Enhancement, 8-Pin PDFN56
- Taiwan Semiconductor TSM025 Type N-Channel MOSFET 40 V Enhancement, 8-Pin PDFN56
- Taiwan Semiconductor TSM025 Type N-Channel MOSFET 60 V Enhancement, 8-Pin PDFN56