Taiwan Semiconductor TSM025 Type N-Channel MOSFET, 73 A, 30 V Enhancement, 8-Pin PDFN56 TSM080N03PQ56
- N° de stock RS:
- 216-9674
- Référence fabricant:
- TSM080N03PQ56
- Fabricant:
- Taiwan Semiconductor
Offre groupée disponible
Sous-total (1 paquet de 50 unités)*
48,85 €
(TVA exclue)
59,10 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Dernier stock RS
- 4 950 dernière(s) unité(s), prête(s) à l'envoi d'un autre centre de distribution
Unité | Prix par unité | le paquet* |
|---|---|---|
| 50 - 50 | 0,977 € | 48,85 € |
| 100 - 200 | 0,878 € | 43,90 € |
| 250 - 450 | 0,861 € | 43,05 € |
| 500 - 950 | 0,80 € | 40,00 € |
| 1000 + | 0,783 € | 39,15 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 216-9674
- Référence fabricant:
- TSM080N03PQ56
- Fabricant:
- Taiwan Semiconductor
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Taiwan Semiconductor | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 73A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | PDFN56 | |
| Series | TSM025 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 8mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 14.4nC | |
| Forward Voltage Vf | 1V | |
| Maximum Power Dissipation Pd | 69W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 155°C | |
| Width | 5 mm | |
| Standards/Approvals | IEC 61249-2-21, RoHS 2011/65/EU, WEEE 2002/96/EC | |
| Length | 6mm | |
| Height | 1mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Taiwan Semiconductor | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 73A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type PDFN56 | ||
Series TSM025 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 8mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 14.4nC | ||
Forward Voltage Vf 1V | ||
Maximum Power Dissipation Pd 69W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 155°C | ||
Width 5 mm | ||
Standards/Approvals IEC 61249-2-21, RoHS 2011/65/EU, WEEE 2002/96/EC | ||
Length 6mm | ||
Height 1mm | ||
Automotive Standard No | ||
The Taiwan semiconductor single N channel power MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.
Low RDS(ON) to minimize conductive losses Low gate charge for fast power switching 100% UIS and Rg tested
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