Infineon HEXFET Dual N-Channel MOSFET, 3.5 A, 30 V, 8-Pin SO-8 IRF9956TRPBF

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Indisponible
RS n'aura plus ce produit en stock.
N° de stock RS:
215-2594
Référence fabricant:
IRF9956TRPBF
Fabricant:
Infineon
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Marque

Infineon

Channel Type

N

Maximum Continuous Drain Current

3.5 A

Maximum Drain Source Voltage

30 V

Series

HEXFET

Package Type

SO-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

0.2 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Transistor Material

Si

Number of Elements per Chip

2

The Infineon series fifth generation HEXFET from International rectifier utilize advanced processing techniques to achieve extremely low on resistance for Silicon area. This benefits, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFET are well known for, providing sufficient level device for, provides designer with an extremely efficient and reliable device for use in a wide variety of applications. The SO-8 has been modified through a customized lead frame for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With this improvement multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapour phase, infrared for Wave soldering techniques.

Generation V technology
Ultra low on resistance
Surface mount
Very low gate charge and switching losses
Fully avalanche rated
Dual N-channel MOSFET

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