Infineon HEXFET Type N-Channel MOSFET, 18 A, 150 V Enhancement, 7-Pin DirectFET AUIRF7675M2TR
- N° de stock RS:
- 214-8950
- Référence fabricant:
- AUIRF7675M2TR
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 paquet de 10 unités)*
20,28 €
(TVA exclue)
24,54 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- Plus 4 800 unité(s) expédiée(s) à partir du 26 janvier 2026
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 10 - 40 | 2,028 € | 20,28 € |
| 50 - 90 | 1,927 € | 19,27 € |
| 100 - 240 | 1,846 € | 18,46 € |
| 250 - 490 | 1,764 € | 17,64 € |
| 500 + | 1,643 € | 16,43 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 214-8950
- Référence fabricant:
- AUIRF7675M2TR
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 18A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Series | HEXFET | |
| Package Type | DirectFET | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 56mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.3V | |
| Maximum Power Dissipation Pd | 45W | |
| Typical Gate Charge Qg @ Vgs | 21nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Length | 6.35mm | |
| Width | 5.05 mm | |
| Height | 0.74mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 18A | ||
Maximum Drain Source Voltage Vds 150V | ||
Series HEXFET | ||
Package Type DirectFET | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 56mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.3V | ||
Maximum Power Dissipation Pd 45W | ||
Typical Gate Charge Qg @ Vgs 21nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Length 6.35mm | ||
Width 5.05 mm | ||
Height 0.74mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
The Infineon combines the latest Automotive HEXFET Power MOSFET Silicon technology with the advanced packaging platform to produce a best in class part for Automotive Class D audio amplifier applications. The package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapour phase, infra-red or convection soldering techniques etc. The package allows dual sided cooling to maximize thermal transfer in automotive power systems. These features combine to make this MOSFET a highly desirable component in Automotive Class D audio amplifier systems.
Advanced Process Technology
175°C Operating Temperature
Liens connexes
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