Infineon OptiMOS-T Type N-Channel MOSFET, 70 A, 120 V Enhancement, 3-Pin TO-220
- N° de stock RS:
- 214-9096
- Référence fabricant:
- IPP70N12S311AKSA1
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 tube de 50 unités)*
115,40 €
(TVA exclue)
139,65 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- Plus 50 unité(s) expédiée(s) à partir du 29 décembre 2025
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le tube* |
|---|---|---|
| 50 - 50 | 2,308 € | 115,40 € |
| 100 - 200 | 1,847 € | 92,35 € |
| 250 - 450 | 1,731 € | 86,55 € |
| 500 - 950 | 1,616 € | 80,80 € |
| 1000 + | 1,50 € | 75,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 214-9096
- Référence fabricant:
- IPP70N12S311AKSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 70A | |
| Maximum Drain Source Voltage Vds | 120V | |
| Series | OptiMOS-T | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 11.6mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 125W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 51nC | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Length | 10.36mm | |
| Width | 4.57 mm | |
| Height | 9.45mm | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 70A | ||
Maximum Drain Source Voltage Vds 120V | ||
Series OptiMOS-T | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 11.6mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 125W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 51nC | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Length 10.36mm | ||
Width 4.57 mm | ||
Height 9.45mm | ||
Automotive Standard AEC-Q101 | ||
The Infineon range offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and Strong IRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
The product is AEC Q101 qualified
It has 175°C operating temperature
100% Avalanche tested
Liens connexes
- Infineon OptiMOS™-T N-Channel MOSFET 120 V, 3-Pin TO-220 IPP70N12S311AKSA1
- Infineon OptiMOS™-T N-Channel MOSFET 120 V, 3-Pin DPAK IPD70N12S311ATMA1
- Infineon OptiMOS™ 3 N-Channel MOSFET 120 V, 3-Pin TO-220 IPP041N12N3GXKSA1
- Infineon OptiMOS™ N-Channel MOSFET 80 V, 3-Pin TO-220 IPP023N08N5AKSA1
- Infineon OptiMOS™ 3 N-Channel MOSFET 80 V, 3-Pin TO-220 IPP100N08N3GXKSA1
- Infineon OptiMOS™ 3 N-Channel MOSFET 40 V, 3-Pin TO-220 IPP048N04NGXKSA1
- Infineon OptiMOS™ 3 N-Channel MOSFET 30 V, 3-Pin TO-220 IPP042N03LGXKSA1
- Infineon OptiMOS™ N-Channel MOSFET Transistor & Diode 120 V, 3-Pin D2PAK IPB70N12S311ATMA1