Infineon Enhancement Mode OptiMOS-T2 2 Type N-Channel MOSFET, 20 A, 40 V Enhancement, 8-Pin TDSON

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Sous-total (1 bobine de 5000 unités)*

1 985,00 €

(TVA exclue)

2 400,00 €

(TVA incluse)

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Dernier stock RS
  • 5 000 dernière(s) unité(s), prête(s) à l'envoi d'un autre centre de distribution
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la bobine*
5000 +0,397 €1 985,00 €

*Prix donné à titre indicatif

N° de stock RS:
214-9059
Référence fabricant:
IPG20N04S4L08AATMA1
Fabricant:
Infineon
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Marque

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

20A

Maximum Drain Source Voltage Vds

40V

Package Type

TDSON

Series

OptiMOS-T2

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

8.2mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

54W

Typical Gate Charge Qg @ Vgs

39nC

Maximum Gate Source Voltage Vgs

±16 V

Forward Voltage Vf

0.9V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Transistor Configuration

Enhancement Mode

Length

5.15mm

Height

1mm

Standards/Approvals

RoHS Compliant

Width

5.9 mm

Number of Elements per Chip

2

Automotive Standard

AEC-Q101

The Infineon range of new OptiMOS -T2 has a range of energy efficient MOSFET transistors with CO2 reduction and electric drives. The new OptiMOS -T2 product family extends the existing families of OptiMOS -T and OptiMOS. The Dual N-channel Logic Level - Enhancement mode, are feasible for automatic optical inspection (AOI). OptiMOS products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements.

The product is AEC Q101 qualified

100% Avalanche tested

It has 175°C operating temperature

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