Infineon OptiMOS-T2 Type N-Channel Power MOSFET, 20 A, 40 V Enhancement, 8-Pin TDSON-8-4 BSC076N04NDATMA1
- N° de stock RS:
- 273-2627
- Référence fabricant:
- BSC076N04NDATMA1
- Fabricant:
- Infineon
Sous-total (1 bobine de 5000 unités)*
2 045,00 €
(TVA exclue)
2 475,00 €
(TVA incluse)
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Unité | Prix par unité | la bobine* |
|---|---|---|
| 5000 + | 0,409 € | 2 045,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 273-2627
- Référence fabricant:
- BSC076N04NDATMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 20A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | OptiMOS-T2 | |
| Package Type | TDSON-8-4 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 7.6mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 28nC | |
| Maximum Power Dissipation Pd | 65W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS, IEC61249-2-21, DIN IEC 68-1: 55/175/56 | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 20A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series OptiMOS-T2 | ||
Package Type TDSON-8-4 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 7.6mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 28nC | ||
Maximum Power Dissipation Pd 65W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS, IEC61249-2-21, DIN IEC 68-1: 55/175/56 | ||
Automotive Standard No | ||
The Infineon Power MOSFET is a N channel 40 V power MOSFET. This MOSFET optimized for drives applications and it is 100 percent avalanche tested. It is qualified for industrial applications according to the relevant tests of JEDEC47 20 2.
Halogen free
RoHS compliant
Pb free lead plating
Fast switching MOSFETs
Superior thermal resistance
Liens connexes
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