Infineon OptiMOS 3 Type N-Channel MOSFET, 70 A, 40 V N, 3-Pin TO-220 IPA041N04NGXKSA1
- N° de stock RS:
- 214-4350
- Référence fabricant:
- IPA041N04NGXKSA1
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 paquet de 15 unités)*
6,18 €
(TVA exclue)
7,485 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- Plus 90 unité(s) expédiée(s) à partir du 19 janvier 2026
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 15 - 60 | 0,412 € | 6,18 € |
| 75 - 135 | 0,391 € | 5,87 € |
| 150 - 360 | 0,375 € | 5,63 € |
| 375 - 735 | 0,359 € | 5,39 € |
| 750 + | 0,334 € | 5,01 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 214-4350
- Référence fabricant:
- IPA041N04NGXKSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 70A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TO-220 | |
| Series | OptiMOS 3 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 4.1mΩ | |
| Channel Mode | N | |
| Typical Gate Charge Qg @ Vgs | 42nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 35W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.68mm | |
| Width | 16.15 mm | |
| Height | 4.85mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 70A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TO-220 | ||
Series OptiMOS 3 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 4.1mΩ | ||
Channel Mode N | ||
Typical Gate Charge Qg @ Vgs 42nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 35W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Length 10.68mm | ||
Width 16.15 mm | ||
Height 4.85mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
This Infineon OptiMOS 3 MOSFET features not only the industry’s lowest R DS(on) but also a perfect switching behaviour for fast switching applications. 15% lower R DS(on) and 31% lower figure of merit (R DS(on) x Q g) compared to alternative devices has been realized by advanced thin wafer technology.
It is Halogen-free according to IEC61249-2-21
Liens connexes
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