Infineon OptiMOS 3 Type N-Channel MOSFET, 70 A, 40 V Enhancement, 3-Pin TO-220

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Sous-total (1 paquet de 10 unités)*

13,52 €

(TVA exclue)

16,36 €

(TVA incluse)

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10 +1,352 €13,52 €

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N° de stock RS:
892-2346
Référence fabricant:
IPP048N04NGXKSA1
Fabricant:
Infineon
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Marque

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

70A

Maximum Drain Source Voltage Vds

40V

Series

OptiMOS 3

Package Type

TO-220

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

4.8mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

79W

Forward Voltage Vf

0.89V

Typical Gate Charge Qg @ Vgs

31nC

Maximum Operating Temperature

175°C

Standards/Approvals

No

Length

10.36mm

Width

4.572 mm

Height

15.95mm

Automotive Standard

No

Infineon OptiMOS™ 3 Series MOSFET, 70A Maximum Continuous Drain Current, 79W Maximum Power Dissipation - IPP048N04NGXKSA1


This MOSFET is intended for high-efficiency power applications, acting as a vital component in various electronic systems. It ensures consistent performance in challenging environments due to its low on-resistance and substantial power dissipation capability.

Features & Benefits


• Supports up to 70A continuous drain current

• Maximum drain-source voltage of 40V for broad applicability

• Single enhancement mode design enhances operational efficiency

• Low maximum drain-source resistance of 4.8 mΩ minimises heat generation

• Power dissipation capability of 79W optimises thermal management

• Accommodates gate voltage swings from -20V to +20V for improved gate drive versatility

Applications


• Power supply circuits in automation systems

• Motor control in industrial environments

• Power converters for efficient energy management

• Renewable energy systems for effective power handling

• High current switch in electronics

What is the operating temperature range for this component?


The operating temperature range is -55 °C to +175 °C, ensuring effective operation across various conditions.

Can it be used in parallel configurations?


Yes, parallel usage is possible to enhance current handling, provided appropriate thermal management is in place.

What are the recommended gate drive levels for optimal performance?


For optimal performance, it is advised to drive the gate between 10V and 20V, adhering to maximum gate threshold limits.

How can heat dissipation be managed in applications using this device?


Using an appropriate heat sink and ensuring a proper PCB layout can effectively manage heat dissipation.

Infineon OptiMOS™3 Power MOSFETs, up to 40V


OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.

Fast switching MOSFET for SMPS

Optimized technology for DC/DC converters

Qualified according to JEDEC1) for target applications

N-channel, logic level

Excellent gate charge x R DS(on) product (FOM)

Very low on-resistance R DS(on)

Pb-free plating

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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