Infineon OptiMOS 3 Type N-Channel MOSFET, 70 A, 40 V Enhancement, 3-Pin TO-220 IPP048N04NGXKSA1
- N° de stock RS:
- 165-8112
- Référence fabricant:
- IPP048N04NGXKSA1
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 tube de 50 unités)*
47,10 €
(TVA exclue)
57,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Dernier stock RS
- 150 dernière(s) unité(s), prête(s) à l'envoi d'un autre centre de distribution
Unité | Prix par unité | le tube* |
|---|---|---|
| 50 - 50 | 0,942 € | 47,10 € |
| 100 - 200 | 0,753 € | 37,65 € |
| 250 - 450 | 0,706 € | 35,30 € |
| 500 - 950 | 0,659 € | 32,95 € |
| 1000 + | 0,612 € | 30,60 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 165-8112
- Référence fabricant:
- IPP048N04NGXKSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 70A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TO-220 | |
| Series | OptiMOS 3 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 4.8mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 79W | |
| Forward Voltage Vf | 0.89V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 31nC | |
| Maximum Operating Temperature | 175°C | |
| Height | 15.95mm | |
| Length | 10.36mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 70A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TO-220 | ||
Series OptiMOS 3 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 4.8mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 79W | ||
Forward Voltage Vf 0.89V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 31nC | ||
Maximum Operating Temperature 175°C | ||
Height 15.95mm | ||
Length 10.36mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
Infineon OptiMOS™ 3 Series MOSFET, 70A Maximum Continuous Drain Current, 79W Maximum Power Dissipation - IPP048N04NGXKSA1
This MOSFET is intended for high-efficiency power applications, acting as a vital component in various electronic systems. It ensures consistent performance in challenging environments due to its low on-resistance and substantial power dissipation capability.
Features & Benefits
• Supports up to 70A continuous drain current
• Maximum drain-source voltage of 40V for broad applicability
• Single enhancement mode design enhances operational efficiency
• Low maximum drain-source resistance of 4.8 mΩ minimises heat generation
• Power dissipation capability of 79W optimises thermal management
• Accommodates gate voltage swings from -20V to +20V for improved gate drive versatility
Applications
• Power supply circuits in automation systems
• Motor control in industrial environments
• Power converters for efficient energy management
• Renewable energy systems for effective power handling
• High current switch in electronics
What is the operating temperature range for this component?
The operating temperature range is -55 °C to +175 °C, ensuring effective operation across various conditions.
Can it be used in parallel configurations?
Yes, parallel usage is possible to enhance current handling, provided appropriate thermal management is in place.
What are the recommended gate drive levels for optimal performance?
For optimal performance, it is advised to drive the gate between 10V and 20V, adhering to maximum gate threshold limits.
How can heat dissipation be managed in applications using this device?
Using an appropriate heat sink and ensuring a proper PCB layout can effectively manage heat dissipation.
Infineon OptiMOS™3 Power MOSFETs, up to 40V
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
Fast switching MOSFET for SMPS
Optimized technology for DC/DC converters
Qualified according to JEDEC1) for target applications
N-channel, logic level
Excellent gate charge x R DS(on) product (FOM)
Very low on-resistance R DS(on)
Pb-free plating
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Liens connexes
- Infineon OptiMOS 3 Type N-Channel MOSFET 40 V Enhancement, 3-Pin TO-220
- Infineon OptiMOS 3 Type N-Channel MOSFET 30 V Enhancement, 3-Pin TO-220
- Infineon OptiMOS-T Type N-Channel MOSFET 120 V Enhancement, 3-Pin TO-220
- Infineon OptiMOS 3 Type N-Channel MOSFET 30 V Enhancement, 3-Pin TO-220 IPP042N03LGXKSA1
- Infineon OptiMOS-T Type N-Channel MOSFET 120 V Enhancement, 3-Pin TO-220 IPP70N12S311AKSA1
- Infineon Single OptiMOS™ 3 1 Type N-Channel MOSFET 80 V Enhancement, 3-Pin TO-220 IPP100N08N3GXKSA1
- Infineon OptiMOS T N-Channel MOSFET 100 V, 3-Pin TO-220 IPP70N10S3L12AKSA1
- Infineon OptiMOS 3 Type N-Channel MOSFET 40 V N, 3-Pin TO-220