Vishay EF Type N-Channel Power MOSFET, 25 A, 600 V Enhancement, 3-Pin TO-263 SIHB125N60EF-GE3

N° de stock RS:: 204-7245
Référence fabricant:: SIHB125N60EF-GE3
Fabricant:: Vishay

Vishay EF Type N-Channel Power MOSFET, 25 A, 600 V Enhancement, 3-Pin TO-263 SIHB125N60EF-GE3

Sous-total (1 bobine de 3000 unités)*

5 748,00 €

(TVA exclue)

6 954,00 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 90,00 €

Temporairement en rupture de stock

Expédition à partir du 12 février 2027

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Unité	Prix par unité	la bobine*
3000 +	1,916 €	5 748,00 €

*Prix donné à titre indicatif

N° de stock RS:: 204-7245
Référence fabricant:: SIHB125N60EF-GE3
Fabricant:: Vishay

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Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Vishay
	Product Type	Power MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	25A
	Maximum Drain Source Voltage Vds	600V
	Package Type	TO-263
	Series	EF
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	125mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	179W
	Typical Gate Charge Qg @ Vgs	31nC
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.2V
	Maximum Gate Source Voltage Vgs	30V
	Maximum Operating Temperature	150°C
	Width	9.65mm
	Standards/Approvals	RoHS
	Height	4.06mm
	Length	14.61mm
	Automotive Standard	No

	Sélectionner tout
	Marque Vishay
	Product Type Power MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 25A
	Maximum Drain Source Voltage Vds 600V
	Package Type TO-263
	Series EF
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 125mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 179W
	Typical Gate Charge Qg @ Vgs 31nC
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.2V
	Maximum Gate Source Voltage Vgs 30V
	Maximum Operating Temperature 150°C
	Width 9.65mm
	Standards/Approvals RoHS
	Height 4.06mm
	Length 14.61mm
	Automotive Standard No

Datasheet - SIHB125N60EF-GE3

Vishay Series EF Power MOSFET, 600V Maximum Drain Source Voltage, 25A Maximum Continuous Drain Current - SIHB125N60EF-GE3

This power MOSFET is a high-voltage N-channel switching transistor designed for surface-mount applications where robust drain current and thermal handling are required. It operates across a wide ambient range and is intended for switching and power conversion tasks in industrial and commercial electronics. The device is supplied in a TO-263 package compatible with surface-mount assembly and conforms to RoHS restrictions.

Features and Benefits:

• 600V rating enables high-voltage switching applications
• 25A continuous drain current supports heavy load currents
• 179W power dissipation allows sustained thermal performance
• 125mΩ Rds(on) minimises conduction losses during operation
• 31nC typical gate charge permits efficient gate-drive timing
• Vgs maximum 30V affords wide gate-drive margin for control

Applications

• Suitable for primary-side SMPS switches in high-voltage supplies
• Ideal for power-factor-correction stages requiring high voltage
• Used with motor-drive front-ends handling elevated voltages
• Can be used for inverter-leg switches in industrial converters
• Suitable for LED drivers needing high-voltage switching capacity

What temperature extremes can the device withstand in service?

It is rated for operation from -55°C up to 150°C, allowing use in harsh thermal environments.

How many electrical connections does the package provide?

The device uses a three-pin configuration suitable for common MOSFET topologies and PCB layouts.

Is this device suitable for automotive qualification programmes?

It is not designated as an automotive-standard component and lacks explicit automotive approval.

What mounting method is required for thermal and mechanical stability?

It is intended for surface mounting in TO-263 format, which facilitates heat transfer to the PCB copper areas.