STMicroelectronics ST Type N-Channel MOSFET, 25 A, 600 V Depletion, 3-Pin TO-263 STB33N60DM6
- N° de stock RS:
- 202-5496
- Référence fabricant:
- STB33N60DM6
- Fabricant:
- STMicroelectronics
Offre groupée disponible
Sous-total (1 paquet de 2 unités)*
14,79 €
(TVA exclue)
17,896 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- Plus 998 unité(s) expédiée(s) à partir du 01 janvier 2026
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 2 - 48 | 7,395 € | 14,79 € |
| 50 - 98 | 5,28 € | 10,56 € |
| 100 - 248 | 5,075 € | 10,15 € |
| 250 - 498 | 4,96 € | 9,92 € |
| 500 + | 4,82 € | 9,64 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 202-5496
- Référence fabricant:
- STB33N60DM6
- Fabricant:
- STMicroelectronics
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 25A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | ST | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.115Ω | |
| Channel Mode | Depletion | |
| Maximum Power Dissipation Pd | 190W | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Typical Gate Charge Qg @ Vgs | 35nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.6V | |
| Maximum Operating Temperature | 150°C | |
| Length | 10.4mm | |
| Standards/Approvals | No | |
| Width | 4.6 mm | |
| Height | 15.85mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 25A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series ST | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.115Ω | ||
Channel Mode Depletion | ||
Maximum Power Dissipation Pd 190W | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Typical Gate Charge Qg @ Vgs 35nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.6V | ||
Maximum Operating Temperature 150°C | ||
Length 10.4mm | ||
Standards/Approvals No | ||
Width 4.6 mm | ||
Height 15.85mm | ||
Automotive Standard No | ||
The STMicroelectronics high-voltage N-channel Power MOSFET is part of the MDmesh™ DM6 fast recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviours available in the market.
Extremely high dv/dt ruggedness
Zener-protected
Liens connexes
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