STMicroelectronics ST Type N-Channel MOSFET, 30 A, 600 V Depletion, 3-Pin TO-220 STF36N60M6
- N° de stock RS:
- 202-5513
- Référence fabricant:
- STF36N60M6
- Fabricant:
- STMicroelectronics
Offre groupée disponible
Sous-total (1 paquet de 2 unités)*
10,36 €
(TVA exclue)
12,54 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- 176 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 2 - 8 | 5,18 € | 10,36 € |
| 10 - 18 | 4,39 € | 8,78 € |
| 20 + | 4,31 € | 8,62 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 202-5513
- Référence fabricant:
- STF36N60M6
- Fabricant:
- STMicroelectronics
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 30A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-220 | |
| Series | ST | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.085Ω | |
| Channel Mode | Depletion | |
| Forward Voltage Vf | 1.6V | |
| Maximum Power Dissipation Pd | 40W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 44.3nC | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Maximum Operating Temperature | 150°C | |
| Height | 30.6mm | |
| Length | 10.4mm | |
| Width | 4.6 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 30A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-220 | ||
Series ST | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.085Ω | ||
Channel Mode Depletion | ||
Forward Voltage Vf 1.6V | ||
Maximum Power Dissipation Pd 40W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 44.3nC | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Maximum Operating Temperature 150°C | ||
Height 30.6mm | ||
Length 10.4mm | ||
Width 4.6 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The STMicroelectronics new MDmesh™ M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology.
Low gate input resistance
100% avalanche tested
Zener-protected
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