STMicroelectronics ST Type N-Channel MOSFET, 30 A, 600 V Depletion, 3-Pin TO-220
- N° de stock RS:
- 202-5511
- Référence fabricant:
- STF36N60M6
- Fabricant:
- STMicroelectronics
Offre groupée disponible
Sous-total (1 tube de 50 unités)*
192,05 €
(TVA exclue)
232,40 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- Plus 150 unité(s) expédiée(s) à partir du 29 décembre 2025
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le tube* |
|---|---|---|
| 50 - 50 | 3,841 € | 192,05 € |
| 100 - 200 | 3,737 € | 186,85 € |
| 250 - 450 | 3,637 € | 181,85 € |
| 500 - 950 | 3,545 € | 177,25 € |
| 1000 + | 3,457 € | 172,85 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 202-5511
- Référence fabricant:
- STF36N60M6
- Fabricant:
- STMicroelectronics
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 30A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-220 | |
| Series | ST | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.085Ω | |
| Channel Mode | Depletion | |
| Maximum Power Dissipation Pd | 40W | |
| Typical Gate Charge Qg @ Vgs | 44.3nC | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Forward Voltage Vf | 1.6V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 10.4mm | |
| Standards/Approvals | No | |
| Height | 30.6mm | |
| Width | 4.6 mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 30A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-220 | ||
Series ST | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.085Ω | ||
Channel Mode Depletion | ||
Maximum Power Dissipation Pd 40W | ||
Typical Gate Charge Qg @ Vgs 44.3nC | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Forward Voltage Vf 1.6V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 10.4mm | ||
Standards/Approvals No | ||
Height 30.6mm | ||
Width 4.6 mm | ||
Automotive Standard No | ||
The STMicroelectronics new MDmesh™ M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology.
Low gate input resistance
100% avalanche tested
Zener-protected
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