onsemi Type N-Channel MOSFET, 98 A, 1200 V Enhancement, 7-Pin TO-263 NVBG020N120SC1

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Options de conditionnement :
N° de stock RS:
195-8970
Référence fabricant:
NVBG020N120SC1
Fabricant:
onsemi
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Marque

onsemi

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

98A

Maximum Drain Source Voltage Vds

1200V

Package Type

TO-263

Mount Type

Surface Mount

Pin Count

7

Maximum Drain Source Resistance Rds

0.028Ω

Channel Mode

Enhancement

Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 20 mohm, 1200V, M1, D2PAK−7L


The On Semiconductor single N-channel silicon carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to silicon. In addition, the low ON resistance and Compact chip size ensure low capacitance and gate charge. It include highest efficiency, Faster operation frequency, increased power density, reduced EMI, and reduced system size.

Ultra low gate charge (typ. QG(tot) = 220nC)

Low effective output capacitance

100% avalanche tested

Qualified according to AEC−Q101

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