onsemi NVB N-Channel MOSFET, 60 A, 1.2 kV Enhancement, 7-Pin TO-263
- N° de stock RS:
- 202-5730
- Référence fabricant:
- NVBG040N120SC1
- Fabricant:
- onsemi
Sous-total (1 bobine de 800 unités)*
14 070,40 €
(TVA exclue)
17 024,80 €
(TVA incluse)
Informations sur le stock actuellement non accessibles - Veuillez vérifier plus tard
Unité | Prix par unité | la bobine* |
|---|---|---|
| 800 + | 17,588 € | 14 070,40 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 202-5730
- Référence fabricant:
- NVBG040N120SC1
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 60A | |
| Maximum Drain Source Voltage Vds | 1.2kV | |
| Package Type | TO-263 | |
| Series | NVB | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 56mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 25V | |
| Typical Gate Charge Qg @ Vgs | 106nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 178W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | AEC-Q101 | |
| Length | 10.2mm | |
| Height | 15.7mm | |
| Width | 4.7mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 60A | ||
Maximum Drain Source Voltage Vds 1.2kV | ||
Package Type TO-263 | ||
Series NVB | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 56mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 25V | ||
Typical Gate Charge Qg @ Vgs 106nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 178W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals AEC-Q101 | ||
Length 10.2mm | ||
Height 15.7mm | ||
Width 4.7mm | ||
Automotive Standard No | ||
Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 40 mohm, 1200 V, M1, D2PAK−7L Silicon Carbide MOSFET, N-Channel, 1200 V, 40 mΩ, D2PAK-7L
The ON Semiconductor Silicon Carbide Power MOSFET runs with 60 Ampere and 1200 Volts. It can be used in Automotive on board charger, DC or DC Converter applications.
AEC Q101 qualified
Production part approval process Capable
100% avalanche tested
Low effective output capacitance
Liens connexes
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