onsemi Type N-Channel MOSFET, 98 A, 1200 V Enhancement, 7-Pin TO-263 NVBG020N120SC1
- N° de stock RS:
- 195-8969
- Référence fabricant:
- NVBG020N120SC1
- Fabricant:
- onsemi
Sous-total (1 bobine de 800 unités)*
27 264,00 €
(TVA exclue)
32 992,00 €
(TVA incluse)
Informations sur le stock actuellement non accessibles - Veuillez vérifier plus tard
Unité | Prix par unité | la bobine* |
|---|---|---|
| 800 + | 34,08 € | 27 264,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 195-8969
- Référence fabricant:
- NVBG020N120SC1
- Fabricant:
- onsemi
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Documentation technique
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Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 98A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | TO-263 | |
| Mount Type | Surface Mount | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 0.028Ω | |
| Channel Mode | Enhancement | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 98A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type TO-263 | ||
Mount Type Surface Mount | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 0.028Ω | ||
Channel Mode Enhancement | ||
Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 20 mohm, 1200V, M1, D2PAK−7L
The On Semiconductor single N-channel silicon carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to silicon. In addition, the low ON resistance and Compact chip size ensure low capacitance and gate charge. It include highest efficiency, Faster operation frequency, increased power density, reduced EMI, and reduced system size.
Ultra low gate charge (typ. QG(tot) = 220nC)
Low effective output capacitance
100% avalanche tested
Qualified according to AEC−Q101