onsemi SiC N-Channel MOSFET, 98 A, 1200 V, 7-Pin D2PAK NVBG020N120SC1

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N° de stock RS:
195-8969
Référence fabricant:
NVBG020N120SC1
Fabricant:
onsemi
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Marque

onsemi

Channel Type

N

Maximum Continuous Drain Current

98 A

Maximum Drain Source Voltage

1200 V

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

7

Maximum Drain Source Resistance

0.028 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.3V

Transistor Material

SiC

Number of Elements per Chip

1

Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 20 mohm, 1200V, M1, D2PAK−7L


The On Semiconductor single N-channel silicon carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. It include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.

Ultra low gate charge (typ. QG(tot) = 220nC)
Low effective output capacitance
100% avalanche tested
Qualified according to AEC−Q101

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