onsemi NTMYS2D4N04C Type N-Channel MOSFET, 138 A, 40 V Enhancement, 4-Pin LFPAK
- N° de stock RS:
- 195-2510
- Référence fabricant:
- NTMYS2D4N04CTWG
- Fabricant:
- onsemi
Sous-total (1 bobine de 3000 unités)*
2 178,00 €
(TVA exclue)
2 634,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Dernier stock RS
- 3 000 dernière(s) unité(s), prête(s) à l'envoi d'un autre centre de distribution
Unité | Prix par unité | la bobine* |
|---|---|---|
| 3000 + | 0,726 € | 2 178,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 195-2510
- Référence fabricant:
- NTMYS2D4N04CTWG
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 138A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | NTMYS2D4N04C | |
| Package Type | LFPAK | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 2.3mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 32nC | |
| Maximum Power Dissipation Pd | 83W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Length | 5mm | |
| Standards/Approvals | No | |
| Width | 4.25 mm | |
| Height | 1.15mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 138A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series NTMYS2D4N04C | ||
Package Type LFPAK | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 2.3mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 32nC | ||
Maximum Power Dissipation Pd 83W | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Length 5mm | ||
Standards/Approvals No | ||
Width 4.25 mm | ||
Height 1.15mm | ||
Automotive Standard No | ||
Industrial Power MOSFET in a 5x6mm LFPAK package designed for compact and efficient designs and including high thermal performance.
Small Footprint (5x6 mm) for Compact Design
Low RDS(on) to Minimize Conduction Losses
Low QG and Capacitance to Minimize Driver Losses
LFPAK4 Package, Industry Standard
These Devices are Pb−Free
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