onsemi NCV51705 MOSFET Enhancement, 24-Pin QFN

Voir l’ensemble des MOSFETs

Sous-total (1 bobine de 3000 unités)*

5 859,00 €

(TVA exclue)

7 089,00 €

(TVA incluse)

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Dernier stock RS
  • 3 000 dernière(s) unité(s), prête(s) à l'envoi d'un autre centre de distribution
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Prix par unité
la bobine*
3000 +1,953 €5 859,00 €

*Prix donné à titre indicatif

N° de stock RS:
195-2458
Référence fabricant:
NCV51705MNTWG
Fabricant:
onsemi
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Marque

onsemi

Product Type

MOSFET

Series

NCV51705

Package Type

QFN

Mount Type

Surface

Pin Count

24

Channel Mode

Enhancement

Maximum Power Dissipation Pd

2.9W

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

125°C

Width

4.1 mm

Height

0.85mm

Length

4.1mm

Standards/Approvals

No

Automotive Standard

AEC-Q100

The NCV51705 driver is designed to primarily drive SiC MOSFET transistors. To achieve the lowest possible conduction losses, the driver is capable to deliver the maximum allowable gate voltage to the SiC MOSFET device. By providing high peak current during turn−on and turn−off, switching losses are also minimized. For improved reliability, dV/dt immunity and even faster turn−off, the NCV51705 can utilize its on−board charge pump to generate a user selectable negative voltage rail. For isolated applications, the NCV51705 also provides an externally accessible 5 V rail to power the secondary side of digital or high speed opto isolators.

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