onsemi MOSFET Gate Driver 1, 6 A 24-Pin 22 V, QFN

Sous-total (1 bobine de 3000 unités)*

6 525,00 €

(TVA exclue)

7 896,00 €

(TVA incluse)

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Unité
Prix par unité
la bobine*
3000 +2,175 €6 525,00 €

*Prix donné à titre indicatif

N° de stock RS:
178-4261
Référence fabricant:
NCP51705MNTXG
Fabricant:
onsemi
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Marque

onsemi

Product Type

MOSFET

Output Current

6A

Pin Count

24

Package Type

QFN

Fall Time

15ns

Driver Type

MOSFET

Number of Outputs

5

Rise Time

15ns

Minimum Supply Voltage

22V

Maximum Supply Voltage

22V

Number of Drivers

1

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

125°C

Length

4mm

Standards/Approvals

No

Series

NCP51705

Height

0.95mm

Width

4 mm

Mount Type

Surface

Automotive Standard

No

The NCP51705 driver is designed to primarily drive SiC MOSFET transistors. To achieve the lowest possible conduction losses, the driver is capable to deliver the maximum allowable gate voltage to the SiC MOSFET device. By providing high peak current during turn−on and turn−off, switching losses are also minimized. For improved reliability, dV/dt immunity and even faster turn−off, the NCP51705 can utilize its on−board charge pump to generate a user selectable negative voltage rail.

Allow independent Turn-ON/Turn-OFF Adjustment

Efficient SiC MOSFET Operation during the Conduction Period

Fast Turn-off and Robust dV/dt Immunity

Minimize complexity of bias supply in isolated gate drive applications

Sufficient VGS amplitude to match SiC best performance

Self protection of the design

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